The period doubling route to chaos of the electrical conductivity in excited photoconductors

Papazoglou, E.N; Kyritsi, K.G.; Anagnostopoulos, A. N.; Antoniou, Ioannis

doi:10.1016/s0960-0779(01)00069-8

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…Shiau et al [7−10] studied numerically chaotic behaviours in n-GaAs. Kyritsi et al [11,12] reported chaotic photoconductivity and the period doubling route to chaos in excited photoconductors. Recently, Feng Yu-Ling et al [13] reported anti-control of chaos in the p-Ge photoconductor.…”

Section: Introductionmentioning

confidence: 99%

Chaotic behaviours and control of chaos in the p–Ge photoconductor

Feng¹,

Zhang²,

Yao³

2010

Chinese Phys. B

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The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for controlling chaos in the p-Ge photoconductor is presented by adding an ac bias current. Numerical simulations show that this scheme can be effectively used to control chaotic states into stable period states for this system. Moreover, the different period states with different period numbers can be obtained by appropriately adjusting the amplitude, frequency, and initial phase of the additional ac current.

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Section: Introductionmentioning

confidence: 99%

Chaotic behaviours and control of chaos in the p–Ge photoconductor

Feng¹,

Zhang²,

Yao³

2010

Chinese Phys. B

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“…Recently, Shiau et al [18−21] studied numerically chaotic behaviours in n-GaAs. In addition, Kyritsi et al [22,23] reported the chaotic photoconductivity and route into chaos in excited photoconductors. In this paper, we investigate the anti-control of chaos in the p-Ge photoconductor since its chaos states may lead detectors made from this p-Ge photoconductor to disabled, so the chaotic state in the p-Ge system is beneficial when we want to destroy these detectors.…”

Section: Introductionmentioning

confidence: 99%

Anti-control of chaos in p–Ge photoconductor

Feng¹,

Zhang

2009

Chinese Phys. B

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We present a scheme for the anti-control of chaos in the p-Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this p-Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p-Ge system gradually evolves to fully developed chaotic states.

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The period doubling route to chaos of the electrical conductivity in excited photoconductors

Cited by 2 publications

References 10 publications

Chaotic behaviours and control of chaos in the p–Ge photoconductor

Chaotic behaviours and control of chaos in the p–Ge photoconductor

Anti-control of chaos in p–Ge photoconductor

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