1975
DOI: 10.1016/0021-9517(75)90333-4
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The physicochemical properties of the bismuth iron molybdate system*1

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Cited by 46 publications
(3 citation statements)
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“…To reduce the problem of contact resistance between a metal wire and a semiconductor with a 2.7 eV band gap, a high bias of 100 V was applied across the outer gold leads. Because the gold wires used are extremely thin, the electric field at their surface can be very high (10 5 −10 6 V/m), leading to tunnel breakdown of the contact resistance or electrolytic breakdown under humid conditions.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…To reduce the problem of contact resistance between a metal wire and a semiconductor with a 2.7 eV band gap, a high bias of 100 V was applied across the outer gold leads. Because the gold wires used are extremely thin, the electric field at their surface can be very high (10 5 −10 6 V/m), leading to tunnel breakdown of the contact resistance or electrolytic breakdown under humid conditions.…”
Section: Methodsmentioning
confidence: 99%
“…With a band gap of 2.7 eV the stoichiometric material is highly insulating and the vacancies act as donors, about 0.4 eV below the conduction band edge . In this paper, we will only consider the stoichiometric or well-oxidized state of bismuth iron molybdate.…”
Section: Introductionmentioning
confidence: 99%
“…19 The spectra of freshly prepared Fe 2 BiMo 2 O x catalyst (Fig. 1, sample 2) indicate the phase composition: Fe 2 (MoO 4 ) 3 , α-Bi 2 (MoO 4 ) 3 , γ-Bi 2 MoO 6 and the ternary compound Fe 2 Bi 3 Mo 2 O 12 with characteristic imprints d/n = 1.9; 1.88; 1.86 Å, 20 as well as with prints d/n = 2.50; 2.31; 2.17 Å, characteristic of the Fe 2 O 3 •(3-4)MoO 3 phase.…”
Section: Resultsmentioning
confidence: 99%