The potential of ion beam techniques for the development of indium nitride

Timmers, H.; Shrestha, Santosh; Byrne, Aidan

doi:10.1016/j.jcrysgro.2004.05.033

Cited by 17 publications

(19 citation statements)

References 25 publications

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“…(ii) Can they be ascribed to the formation of metallic In due to the In-N dissociation? (iii) Can they be related to indium oxide (In 2 O 3 ) subsequent to the oxidation of metallic In when the sample is removed from the implantation chamber, as was previously proposed by Timmers et al [24]? To check these assumptions, powder diffraction patterns of the above structures have been simulated using the JEMS software [25] and compared to the experimental SAED pattern which was acquired close to the interface between the implanted and the non-implanted layer, in order to get a reliable reference from the undamaged InN crystal.…”

Section: Resultsmentioning

confidence: 92%

The high sensitivity of InN under rare earth ion implantation at medium range energy

Lacroix¹,

Chauvat²,

Ruterana³

et al. 2011

J. Phys. D: Appl. Phys.

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In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several micrometres were produced by hydride vapour phase epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ion implantation. Starting at a low fluence of around 5 × 1012 Eu cm−2, an extensive modification of the surface layer takes place. The dissociation of InN and the presence of misoriented nanograins are observed in the damaged area. Analysis by electron diffraction indicates that the nanograins correspond to indium oxide In2O3.

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Section: Resultsmentioning

confidence: 92%

The high sensitivity of InN under rare earth ion implantation at medium range energy

Lacroix¹,

Chauvat²,

Ruterana³

et al. 2011

J. Phys. D: Appl. Phys.

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“…In particular variations in stoichiometry between the nitrogen and indium components of the compound have only just begun to be investigated [4][5][6][7]. However, it has become evident from recent elastic recoil detection analysis (ERDA) measurements that even thin films of MBE grown InN can be nitrogen rich [8]. Independent positron annihilation measurements have confirmed this result by showing that there is a large number of indium vacancies at the substrate interface for the same MBE material [9].…”

Section: Introduction As Shown Inmentioning

confidence: 99%

“…SIMS measurements were carried out at the Australian Nuclear Science and Technology Organisation using a Cameca 5F system as previously described [4]. ERDA was carried out at the Australian National University [8], while the EDX results were obtained at Linköping University. A LEO Supra 55VP SEM at the University of Technology, Sydney, was used to collect SEM images using in-lens imaging.…”

Section: Introduction As Shown Inmentioning

confidence: 99%

Non‐stoichiometry and non‐homogeneity in InN

Scott

Butcher

Wintrebert-Fouquet

et al. 2005

phys. stat. sol. (c)

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It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0 eV that is not due to the Moss-Burstein effect, oxygen inclusion or quantum size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogenity and non-stoichiometry appear to be general problems for InN growth. Excess nitrogen can be present at very high levels and indium rich material is also found. This work shows that the extent of the MossBurstein effect will have to be reassessed for InN.

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“…2c). Note that in both cases the thickness is shorter than the range of protons at E = 150 keV in InN reportedly being 1.4 µm [5]. We believe that in the case of thicker layers the irradiation effects are enhanced by the presence of hydrogen atoms at the end of the stopping range, i.e., there are two kinds of irradiation-produced donors: the genuine defects of donor type produced by collisions of protons with lattice atoms, like in thin layers, and the donor centers related to hydrogen.…”

Section: Electrical Measurementsmentioning

confidence: 79%

Effects of proton irradiation on electrical and optical properties of n‐InN

Emtsev

Davydov

Klochikhin

et al. 2007

Phys. Status Solidi (c)

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Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 − 5 × 10 18 cm −3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate nInN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.

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The potential of ion beam techniques for the development of indium nitride

Cited by 17 publications

References 25 publications

The high sensitivity of InN under rare earth ion implantation at medium range energy

The high sensitivity of InN under rare earth ion implantation at medium range energy

Non‐stoichiometry and non‐homogeneity in InN

Effects of proton irradiation on electrical and optical properties of n‐InN

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