The preparation of conductive ZnS films by using MBE with a single effusion source

Yoneda, Kiyoshi; Toda, Tadao; Hishida, Yuji; Niina, Tatsuhiko

doi:10.1016/0022-0248(84)90141-6

Cited by 36 publications

(7 citation statements)

References 18 publications

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“…5b) [14]. All the films present n-type conductivity with high resistivity values, ranging from 10 4 to 10 6 Ωcm, in accordance with previous results [15].…”

Section: Resultssupporting

confidence: 89%

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Zanettini

Bissoli

Nasi

et al. 2011

Cryst. Res. Technol.

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Zinc Sulphide films were grown by pulsed electron deposition (PED) from room temperature to 350 °C to investigate the possibility of its application in solar cells, in particular as an alternative buffer layer deposited at low temperature. The films were characterized by X-ray diffraction, TEM, AFM, optical absorption and electrical measurements. ZnS films display crystalline structure and columnar growth at room temperature on amorphous substrate; the crystallization improves with the substrate temperature and is predominantly related to the cubic (111) orientation, while the thicker films show coexistence of hexagonal and cubic structures. All the samples have transparencies exceeding 70% in the range 400-1000 nm, energy band gap between 3.25 and 3.65 eV increasing with temperature and resistivity in the range of 10 4 -10 6 Ωcm. The optimization of the growth rate as a function of the growth parameters (substrate temperature and electron gun voltage) is also discussed. The reported results indicate that ZnS might be a suitable material for photovoltaic applications, specifically in process requiring low deposition temperature.

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“…5b) [14]. All the films present n-type conductivity with high resistivity values, ranging from 10 4 to 10 6 Ωcm, in accordance with previous results [15].…”

Section: Resultssupporting

confidence: 89%

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Zanettini

Bissoli

Nasi

et al. 2011

Cryst. Res. Technol.

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“…4(A) and (B) that ZnS and Al-ZnS films present the same experimental CL spectra depicting a band-edge blue emission located at 405 nm (E=3.56 eV) and a blue-green one at 524 nm (E=2.37 eV. Previous works attributed the blue-green emission to Cu impurities intentionally incorporated in the films [10,11]. Recently, one established that this emission in ZnS films is due to selfactivated (S-A) luminescent centers consisted of a double ionized zinc acceptor vacancy defect and an ionized donor impurities such as Ga, In or halogen species [12,13].…”

Section: Resultsmentioning

confidence: 81%

Cathodoluminescent behaviour of sprayed ZnS specimens

2005

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“…Most films displayed twinning in the ͑111͒ growth plane ͓Fig. 2͑B͔͒ which is commonly observed for growth on a ͑111͒ oriented substrate, 13,18 although this twinning was absent and replaced by ͑111͒ twins for some films grown with a lower sulfur cracking temperature of 300°C ͓Fig. 2͑C͔͒.…”

Section: Mbe Growth and Rheed Observationsmentioning

confidence: 87%

“…This trend is in agreement with other work. 11,13,18 A typical film thickness was 600 nm. Some films were characterized by scanning electron microscopy ͑SEM͒ operating in electron channeling pattern ͑ECP͒ mode.…”

Section: Film Characterizationmentioning

confidence: 99%

“…While there have been many reports of ZnS grown by MBE on near lattice matched substrates such as Si, 11,12 GaP, [13][14][15] and GaAs, [16][17][18] with lattice mismatches of 0.4%, 0.8%, and 4%, respectively, little has been reported of epitaxial growth on the highly mismatched substrates GaN (ϳϩ20% mismatch͒ or Al 2 O 3 (ϳϪ20% mismatch͒. These interfaces are very interesting because of the large mismatch and the unusual properties of the constituents.…”

Section: Introductionmentioning

confidence: 99%

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Growth and characterization of light emitting ZnS/GaN heterostructures

Piquette

Bandić

McCaldin

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Heterostructures involving ZnS/GaN show promise for the injection of holes from p-GaN into n-ZnS. Utilizing knowledge obtained from ZnS phosphor technology, this combination could result in a new type of multi-color electroluminescent display. Further, this combination provides a very interesting interface. Both ZnS and GaN are very ionic materials. Hence, it is desirable that the interface will be relatively benign, and that charge injection can occur despite the large lattice mismatch and resulting misfit defects that form near the interface. The highly lattice mismatched structures ZnS/GaN and ZnS/Al 2 O 3 were grown by molecular beam epitaxy using elemental sources. Growth rates of up to 0.4 m ph were observed for the lower growth temperatures, with rapidly diminishing rates for temperatures above 350°C. The GaN substrate consisted of a 3 m epilayer grown on sapphire ͑0001͒ by metalorganic chemical vapor deposition. Reflection high energy electron diffraction observations indicate that the zincblende ZnS layers commonly contain ͑111͒ twins, although films with no visible twin spots could be grown at a high substrate temperature. The sulfide layers were characterized using photoluminescence, x-ray diffraction, and scanning electron microscopy ͑SEM͒. X-ray peaks typically had widths of 400 arcsec for /2 scans, and somewhat worse for scans, indicating mosaic tilt. Photoluminescence spectra of the ZnS films doped with Ag and Al demonstrated the characteristic blue transition near 440 nm. SEM electron channeling patterns indicated that the ZnS films lie at a 30°rotated orientation to the Al 2 O 3 ͑0001͒ substrate, as does GaN. p-GaN/n-ZnS devices were fabricated using standard photolithography techniques. The current voltage characteristics are reported and preliminary electroluminescence results are discussed for this heterojunction system.

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The preparation of conductive ZnS films by using MBE with a single effusion source

Cited by 36 publications

References 18 publications

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Low temperature pulsed electron deposition and characterization of ZnS films for application in solar cells

Cathodoluminescent behaviour of sprayed ZnS specimens

Growth and characterization of light emitting ZnS/GaN heterostructures

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