The Propagation Losses of Cold Deposited Zinc Sulfide Waveguides

Salleh, Saafie; Dalimin, Mohd Noh; Rutt, H.N.

doi:10.4028/www.scientific.net/amr.216.332

Cited by 6 publications

(3 citation statements)

References 10 publications

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“…This table displays that average diameter of grain size increasing with increase in thickness. This may be attributed to reasons, first one is the increase in sputtering rate, and secondly is attributed to the possibility of some small grains agglomerated to form grater grains as increasing deposited time with improved crystallinity as observed from the XRD [10]. Optical transmittance for ZnS:Mn film as measured in the range of incident light wave length (200-1100) nm.…”

Section: -2 Atomic Force Microscopementioning

confidence: 99%

Effect of Thickness on Structural and Optical properties of ZnS:Mn films Prepared by RF magnetron Sputtering Method

Abed¹,

Elttayef²,

Razeg³

2019

Tikrit J. Pure Sci.

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In this study, ZnS: Mn thin films prepared by RF magnetron sputtering technique, were mixed 20 g of ZnS with Mn (2%), and deposited on glass substrate at temperature of 100oC with different thickness (404, 775, and 900) nm. The prepared films were investigated by X-ray diffraction (XRD), atomic force microscopic(AFM), scanning electronic microscopic (SEM), and UV-VIS spectrophotometer. XRD results shows that the films have single crystallization nature with cubic crystal structure (Zinc blende) and strong peaks at (111) as highly preferential orientation. SEM and AFM analysis indicates that the diameter of particles were found to be nanometer, it ranged up to 29.55nm, 89.42nm at thickness (900nm) respectively. The results of UV-Vis spectrophotometry show that the transparency of films with different thickness was found to be around 53.43-86.63% in visible range. The band gap energies are calculated to be between 3.20-3.70 eV.

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Section: -2 Atomic Force Microscopementioning

confidence: 99%

Effect of Thickness on Structural and Optical properties of ZnS:Mn films Prepared by RF magnetron Sputtering Method

Abed¹,

Elttayef²,

Razeg³

2019

Tikrit J. Pure Sci.

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“…The cooling process is simply done by setting the appropriate low voltage of the thermoelectric device. The substrate cooler is operated without liquid nitrogen and is stabled at -50 o C [6]. Cold deposition was performed at the substrate temperature of -50 o C and ambient deposition was performed at the substrate temperature of 25 o C. Substrate temperatures are measured with a chromel/alumel thermocouple attached directly to the substrate with indium solder.…”

Section: Sample Preparationmentioning

confidence: 99%

Cold Deposition of Zinc Sulfide Optical Waveguides Using Thermoelectric Device

Salleh

Rutt

Dalimin

et al. 2011

AMR

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Zinc sulfide (ZnS) thin films as the waveguide medium have been deposited onto oxidized silicon wafer substrates at cold temperature (Tcold = –50oC) and ambient temperature (Tambient = 25oC) by thermal evaporation technique. The surface morphology of ZnS films were pictured with an atomic force microscopy (AFM) and the surface roughness were calculated from the AFM images. The propagation losses of the samples were measured using a scanning detection technique attached to a prism coupler. The AFM results revealed that the surface of cold deposited ZnS film is rougher than the surface of ambient deposited ZnS film. The propagation losses of the cold deposited ZnS waveguide are consistently lower than the ambient deposited ZnS waveguide at all measured wavelengths.

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“…At present, the main methods used to fabricate optical waveguides include ion-beam irradiation/ implantation, proton/ion exchange, metal-ion indiffusion, femtosecond laser direct micromachining/writing and so on [19][20][21][22][23][24]. Up to now, people have successfully fabricated waveguides with above methods in ZnS crystals [25][26][27][28]. However, ZnS ridge waveguide by ion irradiation and femtosecond laser ablation at mid-infrared wavelength has not been reported up to now.…”

Section: Introductionmentioning

confidence: 99%

Mid-Infrared ZnS Ridge Waveguide Fabricated by Femtosecond Laser Ablation Combined With Ion Irradiation

2021

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We have experimentally studied the fabrication of ridge waveguides in zinc sulfide (ZnS) crystal by femtosecond laser ablation combined with Kr8+ ion irradiation. At the wavelength of 4 μm, the waveguide at TE mode shows better guiding properties than TM mode. The transmission performance of the waveguide is improved by using thermal annealing technology to reduce the color centers and point defects in the waveguide. The waveguide propagation loss at TE mode at 4 μm wavelength is reduced to as low as 0.6 dB/cm after annealing. Raman spectroscopy shows that Kr8+ ion irradiation does not cause large lattice damage to ZnS crystal.

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The Propagation Losses of Cold Deposited Zinc Sulfide Waveguides

Cited by 6 publications

References 10 publications

Effect of Thickness on Structural and Optical properties of ZnS:Mn films Prepared by RF magnetron Sputtering Method

Effect of Thickness on Structural and Optical properties of ZnS:Mn films Prepared by RF magnetron Sputtering Method

Cold Deposition of Zinc Sulfide Optical Waveguides Using Thermoelectric Device

Mid-Infrared ZnS Ridge Waveguide Fabricated by Femtosecond Laser Ablation Combined With Ion Irradiation

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