The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions

Ieshkin, A. E.; Kireev, D.S.; Ermakov, Yu. A.; Trifonov, A. S.; Presnov, D. E.; Гаршев, А.В.; Anufriev, Yu.V.; Prokhorova, I.G.; Krupenin, V. A.; Chernysh, V. S.

doi:10.1016/j.nimb.2018.02.019

Cited by 19 publications

(5 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Thickness inhomogeneity reduces the amplitude of interference oscillations such as a small addition to the absorption index. Additionally, the discrepancies in the AFM and ellipsometry data can be associated with the formation of an amorphous layer after processing with clusters [36]. Attempts to introduce an additional layer of 20-30 nm thickness resulted in the very low values of the refractive index (n = 1.2-1.3) of this layer.…”

Section: Ellipsometrymentioning

confidence: 99%

“…Cluster ions can be used to effectively modify the surfaces of various materials due to the collective interaction of hundreds or thousands of weakly bound cluster atoms with target atoms [33]. With the help of cluster ion processing, it is possible to etch and smooth the surface to a subnanometer roughness level [34][35][36][37][38][39][40][41][42][43], while cluster ions, as a rule, damage the subsurface layer with a depth of only a few nanometers [36], without changing the bulk structure of the material. To the best of our knowledge, the change in the morphology of AlN films after treatment with gas cluster ions has not previously been investigated.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

et al. 2022

View full text Add to dashboard Cite

In this paper, the influence of surface modification on the characteristics and properties of AlN thin films on Si and glass-ceramics substrates is investigated. The surface modification was made at various parameters of argon cluster ions. By using XRD and Raman spectroscopy, it was shown that the obtained AlN films have a hexagonal structure with a characteristic direction of texturing along the c axis and slight deviations from it. A comparison of the AlN surface morphology obtained by atomic force microscopy before and after cluster processing was demonstrated. This demonstrated that the cluster ions with low energy per atom (E/N = 10 eV/atom) have a high efficiency of surface smoothing. A decrease in the intensity of the Raman peaks and an increase in their full-width after bombardment with cluster ions were found, which may be caused by a change in the physicochemical state of the surface. The optical properties, the quality of the boundaries, and the distribution map of the thickness of the functional layer of AlN were investigated by the methods of spectral and spatial resolution ellipsometry. By using the cross-sectional SEM, the direction of crystallite texturing was demonstrated. The influence of argon cluster ion bombardment on the stoichiometry of samples was analyzed by EDX spectroscopy. The results obtained demonstrate the efficiency of the cluster ion smoothing of polycrystalline thin films for microelectronics, particularly when creating surface acoustic wave resonators.

show abstract

Section: Ellipsometrymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Применение многозарядных ионов малых энергий продемонстрировано в [15,16] для получения ультратонких изолирующих слоев (0.3−2 нм) оксида кремния, однородных по составу и структуре, с малой шероховатостью поверхности. По аналогии с кластерными ионами [17,18] применение медленных многозарядных ионов позволяет модифицировать приповерхностные слои облучаемых мишеней без ионно-индуцированного дефектообразования на глубине.…”

Section: Introductionunclassified

Влияние Зарядового Состояния Ионов Ксенона На Профиль Распределения По Глубине При Имплантации В Кремний

Балакшин¹,

Кожемяко²,

Petrovic³

et al. 2019

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10^14–10^15) ion/cm^2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

show abstract

“…Обработка материалов слабосвязанными кластерными ионами, генерируемыми ионизацией нейтральных кластеров из сверхзвуковой газовой струи, является многообещающим инструментом для различных практических приложений: приповерхностной имплантации, осаждения тонких пленок, масс-спектрометрии вторичных ионов с помощью кластерных ионов [1]. В частности, нелинейные эффекты взаимодействия кластеров с обрабатываемой поверхностью обеспечивают эффективное сглаживание поверхности различных материалов (металлов, диэлектриков, монокристаллов и сверхтвердых материалов) до субнанометрового уровня шероховатости при минимальном повреждении подповерхностной структуры [2][3][4][5].…”

unclassified

Сглаживание тонких поликристаллических пленок AlN кластерными ионами аргона

Николаев¹,

Коробейщиков²,

Роенко³

et al. 2021

Письма В Журнал Технической Физики

View full text Add to dashboard Cite

The possibility of surface modification of thin polycrystalline aluminum nitride films by bombardment with argon cluster ion beam is investigated. The processing was carried out with high- (105 eV/atom) and low-energy (10 eV/atom) cluster ions. Using the spectral function of roughness, a highly efficient smoothing of the surface of nanostructured thin films of aluminum nitride was demonstrated in a wide range of spatial frequencies (ν = 0.02–128 μm-1) and at small etching depth (<100 nm).

show abstract

The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions

Cited by 19 publications

References 17 publications

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

The Influence of Argon Cluster Ion Bombardment on the Characteristics of AlN Films on Glass-Ceramics and Si Substrates

Влияние Зарядового Состояния Ионов Ксенона На Профиль Распределения По Глубине При Имплантации В Кремний

Сглаживание тонких поликристаллических пленок AlN кластерными ионами аргона

Contact Info

Product

Resources

About