1981
DOI: 10.1109/t-ed.1981.20638
|View full text |Cite
|
Sign up to set email alerts
|

The reduction of emitter-collector shorts in a high-speed all-implanted bipolar technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
5
0

Year Published

1983
1983
2002
2002

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 15 publications
(5 citation statements)
references
References 12 publications
0
5
0
Order By: Relevance
“…1,121 These benefits were observed in p-n junction device characteristics, 258 MOS dynamic shift register leakage currents, 262 DRAM refresh time, 201,263 CCD imager performance by collecting minority-carriers generated by spurious radiation, 175 and CMOS circuit latch-up control by reducing the recombination lifetime in the substrate. 264 Significant improvements were observed in MOS, 263 bipolar, 265 and CPU ICs. 266 Louis Parrillo and colleagues described the integrated benefits of detailed attention to optimizing the response of the silicon wafer to the full suite of bipolar fabrication processes beyond just gettering, in order to achieve optimal IC performance.…”
Section: Journal Of Thementioning
confidence: 99%
See 1 more Smart Citation
“…1,121 These benefits were observed in p-n junction device characteristics, 258 MOS dynamic shift register leakage currents, 262 DRAM refresh time, 201,263 CCD imager performance by collecting minority-carriers generated by spurious radiation, 175 and CMOS circuit latch-up control by reducing the recombination lifetime in the substrate. 264 Significant improvements were observed in MOS, 263 bipolar, 265 and CPU ICs. 266 Louis Parrillo and colleagues described the integrated benefits of detailed attention to optimizing the response of the silicon wafer to the full suite of bipolar fabrication processes beyond just gettering, in order to achieve optimal IC performance.…”
Section: Journal Of Thementioning
confidence: 99%
“…266 Louis Parrillo and colleagues described the integrated benefits of detailed attention to optimizing the response of the silicon wafer to the full suite of bipolar fabrication processes beyond just gettering, in order to achieve optimal IC performance. 265 The development of quantitative gettering processes and models were especially helpful in gaining insight into the microphysical processes operative, although continuous refinements ensure this will remain an active area of research. 260,[267][268][269][270][271][272] Thomas Seidel, in particular, clearly enunciated at the 156th, Fall, 1979 meeting of The Electrochemical Society's Gettering symposium, that successful gettering required three essential steps.…”
Section: Getteringmentioning
confidence: 99%
“…There has been a significant interest in InGaAsP/InP diode lasers, since their emission wavelength covers the low loss and low dispersion region of silica-based fibers (1, 2). Many types of the InGaAsP/InP diode lasers have been developed (3)(4)(5)(6). Among them the channeled substrate buried heterostructure (CSBH) is the most promising laser diode structure.…”
Section: Introductionmentioning
confidence: 99%
“…They have many superior characteristics, e.g., low threshold current, stable fundamental transverse mode oscillation and cw operation at elevated temperatures. During the laser fabrication process, the vgroove etching is one of the crucial steps to yield a stable fundamental mode operation and good temperature characteristics (6). Three different etch masks have been developed to etch v-grooves on (100) InP substrates for CSBH laser diodes (7).…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation