The Resistive Switching Behavior of Al/Chitosan-Graphene Oxide/FTO Structure

Abstract

Resistive random access memory (RRAM) is emerging as a new class of nonvolatile memory that offers promising electronic properties and simple metal-insulator-metal (MIM) structures for sandwich layers, such as organics, inorganics, and hybrid materials. Hybrid structures have attracted much interest recently because of their advantageous properties. The combination of chitosan (CS) and graphene oxide (GO) acts as switching layers in the Al/CS-GO/FTO RRAM structure it is studied with bipolar switching behavior at approximately 102 ON/OFF ratios during 100 cycles. This hybrid interaction is identified by shifts in the D, G, and 2D bands using Raman spectroscopy. The conduction mechanism is proposed to be a space-charge-limited conduction (SCLC) mechanism and trap-assisted tunneling conduction mechanism in the ON and OFF states, respectively. The trapped and detrapped electrons move through the trap sites with external electric fields, and this movement is responsible for the switching mechanism of the CS-GO nanocomposite memory device.

Study of carbon nanotube embedded honey as a resistive switching material

“…Compared with previously reported pure honey-RSM devices [17][18][19][20] and other natural organic materials based RSM devices [22][23][24] embedded with nanomaterials such as CNTs and nanoparticles, this study shows that the incorporation of CNTs in honey-RSM devices can lower the HRS leakage current, increase the ON/OFF current ratio, and reduce SET and RESET time response and increase switching speed, which are desirable for nonvolatile memory. This study established a useful practice for fabrication of RSM devices based on honey and can be extended to other natural organic materials.…”

“…Investigations have been carried out to further improve switching properties of natural organic materials by incorporating carbon-based nanomaterials such as graphene in chitosan [22], graphite nanosheet in keratin [23], and carbon nanotube (CNT) in egg albumen [24]. The improvement by these nanomaterials is attributed to the regulation of formation and rupture of conductive filaments [25].…”

Flexible Memristor-Based Nanoelectronic Devices for Wearable Applications: A Review

“…Polysaccharides, such as chitosan (CS) and cellulose, have been reported to be able to prepare transistors, memristors, and synaptic devices. − Rho et al prepared a flexible memristive device with Ag/Au–CS/Au structure based on CS on a flexible transparent substrate . This transparent biomemristive device is feasible, flexible, and biodegradable.…”