The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K

Güçlü, Ç. Ş.; Özdemir, Ahmet Faruk; Aldemir, Durmuş Ali; Altındal, Ş.

doi:10.1007/s10854-021-05284-z

Cited by 17 publications

(3 citation statements)

References 43 publications

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“…For the 1 × 10 15 C 4+ /cm 2 irradiated sample, I R increases sharply, but when the irradiation temperature is increased to 413 K, I R decreases significantly. For the reverse leakage current, ohmic and trapassisted tunneling are the dominant conduction mechanisms [32]. The reason for this is that the defects produced by irradiation increase the recombination current.…”

Section: Resultsmentioning

confidence: 99%

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Tian

et al. 2023

J. Phys. D: Appl. Phys.

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The effects of electric polarization and defect energy levels induced by C4+ irradiation on the electrical behavior of 4H-SiC Schottky Barrier Diodes (SBDs) are discussed. The parameters of the SBDs were extracted from capacitance-voltage (C-V) and current-voltage (I-V) measurements, the deep level transient spectroscopy (DLTS) was used to identify defect energy levels. In addition, the dielectric function and energy band structure of 4H-SiC were calculated using the first-principles approach to verify the enhancement of polarization and the origin of the defect energy levels. The results show that the net (donor) carrier concentration (Nd) increases with the increase of irradiation fluence, which is caused by the competition between irradiation-induced defects and the polarization effect. On the one hand, Z1/2 is determined by DLTS. It is related to the doubly negatively (2-|0) charged state of Vc (carbon vacancy), which is a double acceptor. The intensity of the Z1/2 peak increases with increasing irradiation fluence, which means that the defects caused by irradiation should reduce the Nd. On the other hand, the polarization effect does exist and it becomes stronger with the increase of the irradiation fluence, which makes the Nd increases. Obviously, the polarization effect induced by the irradiation is dominant for Nd when the depth of ion penetration is in the shallow layer behind the metal-semiconductor (M-S) interface. Irradiation induced electron traps and an uneven distribution of positively charged centers, which can cause ln(I)-V to exhibit a non-linear component before reaching the turn-on voltage. The series resistance (Rs), reverse current (IR) increases and the forward current decreases with the increase of irradiation fluence. All those show that the irradiation cause degradation of Ni/4H-SiC SBD performance.

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Section: Resultsmentioning

confidence: 99%

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Tian

et al. 2023

J. Phys. D: Appl. Phys.

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“…Here, we make the assumption that the constant resistor in the voltage divider is independent of the frequency of the current flow. Through the substitution of the expression derived in equation (37), we are able to simplify this aspect of our analysis as follows…”

Section: Receiver Transfer Functionmentioning

confidence: 99%

“…Various techniques have been explored for detecting THz wireless signals, but the most commonly used method involves a waveguide-integrated detector that employs GaAs Schottky barrier diodes (SBDs) [33,36]. However, SBDs are susceptible to reverse leakage current, which can introduce inaccuracies in the measurement and control of high-frequency circuits [37,38]. The subsequent phase of the receiver mechanism involves demodulating the identified signal to separate the information signal from the carrier signal.…”

Section: Introductionmentioning

confidence: 99%

Floquet engineering-based frequency demodulation method for wireless THz short-range communications

Herath,

Nirmalathas,

Gunapala

et al. 2023

Phys. Scr.

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This study introduces a novel theoretical framework for detecting and decoding wireless communication signals in the nanoscale range operating at terahertz (THz) frequencies. Initially, we investigate the Floquet states in a dressed 2D semiconductor quantum well and derive an analytical expression to determine its longitudinal conductivity. The results indicate that the longitudinal conductivity of a dressed 2D semiconductor can be tailored to specific requirements by manipulating the frequency of the external dressing field. Furthermore, carefully selecting the intensity and polarization type of the external dressing field enables fine-tuning and optimization of the conductivity. To evaluate the effectiveness of each dressing field configuration, we present a Figure of Merit (FoM) assessment that determines the maximum possible change in conductivity within the considered frequency range. The proposed theory introduces a mechanism capable of identifying frequency-modulated communication signals in the THz range and performing frequency demodulation. We comprehensively analyze of the demodulator's transfer function in the receiver. Consequently, we establish that the transfer function exhibits linear behavior over a specific frequency range, rendering it suitable for frequency demodulation. Finally, we provide a numerical illustration of a frequency demodulation scenario. The breakthrough uncovered in this study opens up possibilities for the development of high-efficiency, lightweight, and cutting-edge chip-scale wireless communication devices, circuits, and components.

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Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes

Reddy

Janardhanam²,

Reddy³

et al. 2021

Appl. Phys. A

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The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K

Cited by 17 publications

References 43 publications

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Floquet engineering-based frequency demodulation method for wireless THz short-range communications

Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes

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