The role of dislocation scattering in <i>n</i>-type GaN films

Ng, H. M.; Doppalapudi, D.; Moustakas, T. D.; Weimann, Nils; Eastman, L.F.

doi:10.1063/1.122012

Cited by 430 publications

(315 citation statements)

References 9 publications

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“…It was argued that, in the case of low dopant concentrations, dislocation scattering dominates whereas impurity scattering becomes significant at high carrier concentration due to screening of the dislocation charge. [31][32][33] Therefore, the slight difference in plasmon damping in the Ga-and N-face domains can be explained by differences in threading dislocation density.…”

Section: Resultsmentioning

confidence: 99%

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Park

Cuomo

Rodriguez

et al. 2003

Journal of Applied Physics

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PublicationThe electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon-plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.

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Section: Resultsmentioning

confidence: 99%

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Park

Cuomo

Rodriguez

et al. 2003

Journal of Applied Physics

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“…In Si-doped GaN for the dislocation density below 10 9 cm −2 , it was reported that the majority electron mobility is mainly limited not by the dislocation density but by the doping concentration. 18 The mobility values decrease with increasing the Si-doping concentration, and they are 170, 100, and 60 cm 2 / V s for the carrier concentration of 4 ϫ 10 18 , 1 ϫ 10 19 , and 6 ϫ 10 19 cm −3 , respectively. 18 These reported majority electron mobility values agree with the minority electron mobility values derived from the EBIC results.…”

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confidence: 99%

“…18 The mobility values decrease with increasing the Si-doping concentration, and they are 170, 100, and 60 cm 2 / V s for the carrier concentration of 4 ϫ 10 18 , 1 ϫ 10 19 , and 6 ϫ 10 19 cm −3 , respectively. 18 These reported majority electron mobility values agree with the minority electron mobility values derived from the EBIC results. On the other hand, the minority hole mobilities were calculated to be 26 and 23 cm 2 / V s for the Si-doping concentrations of 4 ϫ 10 17 and 4 ϫ 10 18 , respectively.…”

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confidence: 99%

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

et al. 2005

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We investigated the minority carrier diffusion length in p-and n-GaN by performing electron-beam-induced current measurements of GaN p -n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 10 8 cm −2 . It increased from 220 to 950 nm with decreasing Mg doping concentration from 3 ϫ 10 19 to 4 ϫ 10 18 cm −3 . For relatively high dislocation density above 10 9 cm −2 , it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length.

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“…The dislocation density determined from this model was proved to be in good agreement with transmission electron microscopy ͑TEM͒ results. 19,20 Based on the dislocation model, the dislocation densities of samples I and III are estimated to be mid-10 9 cm Ϫ2 whereas sample II is in the low-10 9 cm Ϫ2 range. Future works on TEM and selective photoenhanced wet etching 21 experiments will be done to further elucidate the effects of types I, II, and III DBL on the reduction in dislocation density and this will be subject of a separate publication.…”

Section: Resultsmentioning

confidence: 99%

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

Fong

Leung

et al. 2003

Journal of Applied Physics

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We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer ͑DBL͒ structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer ͑ITBL͒. In this study, three types of DBL were investigated: ͑i͒ thin GaN low-temperature buffer layer /GaN ITBL ͑type I͒; ͑ii͒ nitridated Ga metal film/GaN ITBL ͑type II͒; and ͑iii͒ thin AlN high-temperature buffer layer /GaN ITBL ͑type III͒. Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs.

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The role of dislocation scattering in n-type GaN films

Cited by 430 publications

References 9 publications

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

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