The role of Ga and Bi doping on the local structure of transparent zinc oxide thin films

The effect of Bi doping on the thermal conductivity of ZnO and ZnO:Al thin films

“…From the conjugation of the two views, or rather, the projections of the Bi concentration shown, it is concluded that Bi appears to segregate at the triple points of the grain boundaries and not in all of the boundary surface, as one does not observe Bi-rich planes but lines. These conclusions are coherent with results already published by the authors [33], according to what was found by transmission electron microscopy (TEM) about very similar samples of ZnO:Ga,Bi. The TEM micrographs in this referred work can be regarded as a sectional analysis according to the xy plane, and coherently with what has been discussed about the APT results, it is possible to conclude that the concentration of Bi is higher at the triple points.…”

“…Thus, for the case of the samples with ZnO matrix, morphological reasons linked to the presence (ZnO:Bi) or absence (ZnO) of Bi/Bi 2 O 3 at the triple points of the grain boundaries are sought to justify the κ decrease. As the authors have previously proven that Bi does not enter the ZnO crystal lattice [33], then κ decreases due to the inherent phonon scattering from Bi/Bi lattice but segregates to the grain boundaries (mainly the triple points). This means that grain boundary scattering is enhanced by Bi incorporation, up to a point of causing a similar effect as alloy scattering with Al in ZnO.…”

The Influence of Sb Doping on the Local Structure and Disorder in Thermoelectric Zno:Sb Thin Films

“…EXAFS spectra at both edges were analysed using two theoretical approaches. The contributions from the first and second coordination shells of Zn, composed of oxygen and zinc atoms, respectively, and the first coordination shell of Sb, composed of oxygen atoms, were analysed using the conventional EXAFS equation within the singlescattering approximation [29,31]. The required backscattering amplitude and phase shift functions for Zn-O, Zn-Zn, and Sb-O atom pairs were calculated using ab initio self-consistent real-space multiple-scattering (MS) FEFF 8.50 L code [32,33].…”

“…The analysis of the first two peaks in FTs was performed in detail. They correspond to the first coordination shell of zinc composed of oxygen atoms (the peak at about 1.5 Å) and to the second coordination shell of zinc composed of zinc atoms (the peak at about 3 Å) [31].…”

Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

“…In addition to good absorptivity, high conductivity is the prerequisite for their applications in electro-optic devices. An effective method to achieve these properties is doping with metals, especially elements of group III (Al, Ga), which have been shown to substitute Zn or O in the ZnO structure to enable n-type doping [4][5][6][7][8][9][10]. Employing a physical deposition approach, Sun et al [11] studied (Al, Co)-ZnO films cosputtered on glass substrate to reveal that (Co, Al) doping affects the carrier mobility due to the reduce crystallinity in the deposited films.…”