The Role of Interfaces in Damascene Phase-Change Memory

Kencke, D.L.; Karpov, I. V.; Johnson, Bob; Lee, Sean Jong; Kau, D.; Hudgens, S. J.; Reifenberg, John P.; Savransky, Semyon D.; Zhang, Jingyan; Giles, M.D.; Spadini, G.

doi:10.1109/iedm.2007.4418936

Cited by 32 publications

(19 citation statements)

References 9 publications

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“…These simplified models can serve as a convenient express analysis tool. Our predicted values of filament temperature fall in the ballpark of the earlier measured and modeled values [18], [19], [20]; some differences can be attributed to the particular structural and material parameter choices, and the effects of interfacial resistances [14] neglected here.…”

Section: Discussionmentioning

confidence: 55%

Heat Transfer in Filamentary RRAM Devices

Niraula

Карпов

2017

IEEE Trans. Electron Devices

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We study the heat transport in filamentary RRAM nano-sized devices by comparing the accurate results of COM-SOL modeling with simplified analytical models for two complementary mechanisms: one neglecting the radial heat transfer from the filament to the insulating host, while the other describing the radial transport through the dielectric in the absence of the filament heat transfer. For the former, we find that the earlier assumed simplification of the electrodes being ideal heat conductors is insufficient; a more adequate approximation is derived where the heat transport is determined by the adjacent proximities of the filament tips in the electrodes. We find that both complementary mechanisms overestimate the maximum temperature yet offering acceptable results. However, the two in parallel provide a better analytical approximation. In addition, we show that the Wiedemann-Franz-Lorenz law helps the analysis when the Lorenz parameter is chosen from the actual data. We present an approximate expression for the SET voltage possessing a high degree of universality and predicting that filament materials with low Lorenz numbers can be good candidates for the future low set voltage devices.Index Terms-Heat transfer, resistive random access memory (RRAM), switching.

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Section: Discussionmentioning

confidence: 55%

Heat Transfer in Filamentary RRAM Devices

Niraula

Карпов

2017

IEEE Trans. Electron Devices

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“…PCM uses the difference in electrical resistivity between the crystalline and amorphous phases of chalcogenides such as Ge 2 Sb 2 Te 5 (GST) [3]. Thermal properties and models are important for predicting programming current and thermal disturbances among neighboring devices [2], [4], [5]. Our recent work reported anisotropic thermal conduction in GST due to amorphous phase impurities in GST films [6], but no available theory rigorously models this effect and the impact on device performance has not been assessed.…”

Section: Introductionmentioning

confidence: 97%

Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in Phase-Change Memory

Lee

Reifenberg

et al. 2011

IEEE Electron Device Lett.

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Thermal conduction strongly influences the programming energy and speed in phase-change-memory devices. The thermal conductivity of the crystalline phase of Ge 2 Sb 2 Te 5 can be strongly anisotropic due to phase impurities at grain boundaries. This letter models this effect using effective medium arguments, lends further support to the hypothesis that phase impurities are responsible for the anisotropy, and estimates the impact of anisotropic heat conduction on device performance. Electrothermal simulations predict that the reduced in-plane conductivity will allow closer spacing of lateral-cell devices and reduce the reset programming current by 20%-30%. IndexTerms-Chalcogenide, nonvolatile memories, phase-change memory (PCM), thermal conductivity anisotropy.

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“…Kencke et al 13 measured the electrical resistance, as well as the thermal boundary resistance ͑TBR͒ at the interface between the bottom electrode ͑BE͒ and amorphous GST, for a phase change memory cell. The experimental procedure was based on the nanosecond thermoreflectance technique in the 25-100°C temperature range and a TBR value for the BE-GST layers was obtained approximately equal to…”

Section: Introductionmentioning

confidence: 99%

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

Battaglia

Kusiak

Schick

et al. 2010

Journal of Applied Physics

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. The thermal conductivity of Ge 2 Sb 2 Te 5 ͑GST͒ layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO 2 , was measured using a photothermal radiometry experiment. The two phase changes in the Ge 2 Sb 2 Te 5 were retrieved, starting from the amorphous and sweeping to the face centered cubic ͑fcc͒ crystalline state at 130°C and then to the hexagonal crystalline phase ͑hcp͒ at 310°C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO 2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.

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The Role of Interfaces in Damascene Phase-Change Memory

Cited by 32 publications

References 9 publications

Heat Transfer in Filamentary RRAM Devices

Heat Transfer in Filamentary RRAM Devices

Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in Phase-Change Memory

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

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