Phase-change nonvolatile semiconductor memory technology is based on an electrically initiated, reversible rapid amorphous-to-crystalline phase-change process in multicomponent chalcogenide alloy materials similar to those used in rewriteable optical disks. Long cycle life, low programming energy, and excellent scaling characteristics are advantages that make phase-change semiconductor memory a promising candidate to replace flash memory in future applications. Phase-change technology is being commercialized by a number of semiconductor manufacturers. Fundamental processes in phase-change semiconductor memory devices, device performance characteristics, and progress toward commercialization of the technology are reviewed.

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contact (BEC) and GST phase change layers (Fig 2). This Phase change memory (PCM) research has largely focused on approach self-aligns BEC and GST regions reliably to bulk properties to evaluate cell efficiency. Now both produce an efficient PCM cell. electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel Damascene-GST cell. Interfaces reduce reset power 20% and reset current 40% and allow reset current to scale faster than it would without interfaces.

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