The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Дроздов, М. Н.; Drozdov, Yu. N.; Чхало, Н. И.; Полковников, В. Н.; Салащенко, Н. Н.; Yunin, P. A.; Roddatis, Vladimir; Tolstogouzov, A.

doi:10.1016/j.tsf.2015.01.025

Cited by 17 publications

(9 citation statements)

References 19 publications

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“…The Ga profile is more extended and demonstrates gradual decrease of the intensity to the interface as compared to the abrupt As one. Such behavior of one of the elements in a layered multi-component system may be related to the phenomenon of reaction diffusion [21,22]. In this case, it is mainly Ga that forms chemical bonds with Se, rather than As with Zn, that leads to the strong spreading of the Ga profile.…”

Section: Macro Structural Propertiesmentioning

confidence: 99%

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions andex situannealing

Komissarova

Лебедев

Sorokin

et al. 2017

Semicond. Sci. Technol.

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A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2×4)As or c(4×4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 10 6 cm −2 ) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

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Section: Macro Structural Propertiesmentioning

confidence: 99%

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions andex situannealing

Komissarova

Лебедев

Sorokin

et al. 2017

Semicond. Sci. Technol.

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“…In previous research we studied the contribution to the depth resolution of the following basic artifacts of depth profiling for TOF.SIMS‐5: crater geometry, both initial and sputter‐induced surface roughness, collisional atomic mixing. It was found out that for smooth (root mean square deviation R q < 1 nm) surfaces the using of 1 keV energy sputtering ions allows to obtain depth resolution of 1.2–2 nm for the most of investigated structures.…”

Section: Experimental Results On Diamond Delta Dopingmentioning

confidence: 99%

Novel microwave plasma-assisted CVD reactor for diamond delta doping

Vikharev

Горбачев

Lobaev

et al. 2016

Phys. Status Solidi RRL

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We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra‐sharp interfaces between doped and undoped material and minimize the prolonged ”tails” formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer‐thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta‐layer and multiple delta‐layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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“…Schematic of the main optical components in an EUV lithography system [30] 综述 3 Schematic view of Bragg diffraction for PMMs 图 4 常见元素在 6.7 nm 处的折射率的实部 δ 和虚部 β (原始数据来源于劳伦斯伯克利国家实验室) ［38］ Fig. 4 Real and imaginary parts of the refractive index at 6.7 nm for typical elements (original data obtained from Lawrence Berkeley National Laboratory) [38] 0701010 -5 7 Schematic of La/B 4 C multilayers with barrier layer of carbon [55] . (a) Structures of La/B 4 C with carbon barrier layer inserted on different interfaces; (b) zoomedin depth profiles of La + measured by using TOF -SIMS (reprinted and adapted from Ref.…”

Section: X Nm 下一代极紫外多层膜技术研究进展mentioning

confidence: 99%

“…(a) Structures of La/B 4 C with carbon barrier layer inserted on different interfaces; (b) zoomedin depth profiles of La + measured by using TOF -SIMS (reprinted and adapted from Ref. [55] with permission from Elsevier)…”

Section: X Nm 下一代极紫外多层膜技术研究进展mentioning

confidence: 99%

6.X nm下一代极紫外多层膜技术研究进展

Li Xiaoran,

Tang Hetao,

Zhao Jiaoling

et al. 2024

中国激光

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Significance The production of integrated circuits relies primarily on lithography. Extreme Ultraviolet (EUV) lithography employing a light source at 13.5 nm is currently the most advanced lithography technology for highvolume mass production, which has led to unprecedented progress in the development of integrated circuits (IC). The constant demand for IC chips with higher computing power has increased with the technological development of artificial intelligence in recent years. This requires further

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The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Cited by 17 publications

References 19 publications

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions andex situannealing

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions andex situannealing

Novel microwave plasma-assisted CVD reactor for diamond delta doping

6.X nm下一代极紫外多层膜技术研究进展

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