1999
DOI: 10.1088/0022-3727/32/3/006
|View full text |Cite
|
Sign up to set email alerts
|

The role of ZnO:Al films in the performance of amorphous-silicon based tandem solar cells

Abstract: Degradation of textured SnO 2 :F films in glow-discharge hydrogen plasmas has been minimized by deposition ZnO:Al films onto them. This coating also prevents the diffusion of Sn atoms from SnO 2 :F into the stacked silicon layers of solar cells, while the transmittance and sheet resistivity remain unaltered. Another important aspect is the rear reflection at the back contact. Use of a ZnO 2 :Al layer as a back reflector at the n + /metal interface in a-Si:H tandem solar cells has been found to absorb light of … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
13
0

Year Published

2008
2008
2013
2013

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 28 publications
(13 citation statements)
references
References 9 publications
0
13
0
Order By: Relevance
“…Due to these properties ZnO is a promising material for electronic or optoelectronic applications such as solar cells (anti-reflecting coating and transparent conducting materials), gas sensors, liquid crystal displays, heat mirrors, surface acoustic wave devices etc. [4][5][6]. In addition to the traditional applications ZnO thin films could also be used in integrated optics and gas sensors [7].…”
Section: Introductionmentioning
confidence: 99%
“…Due to these properties ZnO is a promising material for electronic or optoelectronic applications such as solar cells (anti-reflecting coating and transparent conducting materials), gas sensors, liquid crystal displays, heat mirrors, surface acoustic wave devices etc. [4][5][6]. In addition to the traditional applications ZnO thin films could also be used in integrated optics and gas sensors [7].…”
Section: Introductionmentioning
confidence: 99%
“…as transparent thin film transistors [1], solar cells [2,3] and UV light emitting diodes [4]. Among materials with n-type conductivity, zinc oxide with a Wurtzite structure (w-ZnO, P6 3 mc space group) doped with trivalent metal ions [5] (Al 3+ , Ga 3+ , In 3+ ) represents a promising alternative to indium-doped tin oxide (ITO) and fluorine-doped tin oxide (SnO 2 :F).…”
mentioning
confidence: 99%
“…Zinc oxide (ZnO) thin film have been used for applications in many fields, such as thin film solar cells, liquid crystal display, organic light emitting diode and plasma display panels [1][2][3]. The ZnO thin film has advantages, such as low cost, stability in hydrogen plasma, non-toxicity and high transmittance in the visible range [4].…”
Section: Introductionmentioning
confidence: 99%