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Degradation of textured SnO 2 :F films in glow-discharge hydrogen plasmas has been minimized by deposition ZnO:Al films onto them. This coating also prevents the diffusion of Sn atoms from SnO 2 :F into the stacked silicon layers of solar cells, while the transmittance and sheet resistivity remain unaltered. Another important aspect is the rear reflection at the back contact. Use of a ZnO 2 :Al layer as a back reflector at the n + /metal interface in a-Si:H tandem solar cells has been found to absorb light of the long-wavelength (λ > 600 nm) region in the solar spectrum. This improves the short-circuit current density and thereby the efficiency of amorphous silicon solar cells to a great extent.

The electrical properties of RF magnetron-sputtered aluminium-doped zinc oxide (AZO) films are studied. It is seen that the properties are closely related to their structural properties and doping incorporation. The highly conductive milky AZO films with a wedge-like surface consist of very small crystal grains. It is interesting to note that texturization is obtained in this case at a film thickness less than . At a substrate temperature of , texturization occurs and the resistivity obtained after hydrogen treatment is . This result is very significant and it may accelerate the application of inexpensive AZO films in hydrogenated amorphous silicon solar cells.

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