2011
DOI: 10.1117/12.881573
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The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch

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Cited by 5 publications
(3 citation statements)
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“…Typical leading EUV resists have film thicknesses in the range of 40 to 45 nm. 5 Looking ahead to the challenging future patterning requirements for semiconductor lithography, we consider here design principles for a sub-20-nm EUV imaging material. We highlight four key attributes of an integrated materials system: -EUV absorption: efficient capture of incident EUV photons is central to maximizing the spatial information content extracted from the aerial image.…”
Section: Introductionmentioning
confidence: 99%
“…Typical leading EUV resists have film thicknesses in the range of 40 to 45 nm. 5 Looking ahead to the challenging future patterning requirements for semiconductor lithography, we consider here design principles for a sub-20-nm EUV imaging material. We highlight four key attributes of an integrated materials system: -EUV absorption: efficient capture of incident EUV photons is central to maximizing the spatial information content extracted from the aerial image.…”
Section: Introductionmentioning
confidence: 99%
“…One might assume the lack of progress to be a limitation of the exposure tool rather than the resist, however, with its lossless programmable illuminator, the SEMATECH Berkeley MET is easily capable of sub-16-nm printing [20]. The ultimate resolution observed to date in BMET [21] has been achieved using a directly imageable metal oxide hardmask.…”
Section: Nm and Belowmentioning
confidence: 99%
“…Among the various techniques that have been developed over the years to fabricate ICs for electronic devices, due to its high resolution and throughput capability, photolithography as the most promising top-down nanofabrication method has been the workhorse for large scale production of micro/nanoscale devices in industries 4 5 . While immersion optical lithography technique has been the dominant patterning technique in semiconductor industries, extreme ultraviolet lithography (EUVL) using 13.5 nm light source is being considered to be the most potential and cost-effective next generation lithography (NGL) candidate for patterning ultrafine nanofeatures with high resolution, and this technique is approaching well into the commercialization 6 7 8 9 10 .…”
mentioning
confidence: 99%