The spreading resistance of MOSFET's

Ng, Kwok K.; Bayruns, R.; Fang, Shu‐Cherng

doi:10.1109/edl.1985.26094

Cited by 22 publications

(4 citation statements)

References 8 publications

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“…Near the vicinity of the metallurgical junction, the conductivity of the accumulation layer is extremely high relative to the underlaying diffused region, so that the carrier flow does not spread immediately but is rather confined to the surface accumulation layer. As pointed out in [24] the value of the spreading resistance depends heavily on the local resistivity oftheregion where current spreading takes place.…”

Section: The Effective Mobility For All Transistors Decreasesmentioning

confidence: 99%

Extraction of the series resistance and the effective mobility in enhancement MOSFETs from weak to strong inversion using a single transistor

Fikry

Haddara

Ragaie

et al. 1996

Analog Integr Circ Sig Process

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This work presents a new approach for the simultaneous determination of the effective channel mobility and the parasitic series resistance as a function of gate voltage in enhancement MOSFETs. The proposed method is applicable for short channel devices as well as long channel ones. It also takes into consideration the effect of interface traps and the dependence of the effective channel length on gate bias. The method is based on the measurement of the dynamic transconductance, gate-channel capacitance and the ohmic region drain current all on a single MOS transistors. The obtained results suggest a peak for the effective mobility versus gate voltage near threshold. The parasitic series resistance for short channel devices shows only slight dependence on the gate bias in the whole strong inversion region. On the contrary, for long channel devices, the series resistance significantly decreases with increasing gate voltage at the onset of strong inversion and then tends to level off as the device is pushed deeper in strong inversion.

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Section: The Effective Mobility For All Transistors Decreasesmentioning

confidence: 99%

Extraction of the series resistance and the effective mobility in enhancement MOSFETs from weak to strong inversion using a single transistor

Fikry

Haddara

Ragaie

et al. 1996

Analog Integr Circ Sig Process

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show abstract

“…The spreading resistance that is due to current crowding is one of the major components of the intrinsic series resistance. 15 The GaN film epitaxially grown on silicon substrate is imposed by high dislocation density because of the lattice mismatch between GaN and silicon, which results in a reduced mobility of the carriers in epitaxial film. Hence, the spreading resistance is negatively affected.…”

mentioning

confidence: 99%

High efficiency membrane light emitting diode fabricated by back wafer thinning technique

Shi

Zhu

et al. 2014

Applied Physics Letters

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We demonstrate the double-side process for back wafer thinning of epitaxial film which leads to improved performance of freestanding membrane light emitting diode (LED) on GaN-on-silicon platform. The current-voltage (I-V), capacitance-voltage (C-V), and electroluminescent measurements are conducted to characterize freestanding membrane LED. After the removal of silicon substrate and back wafer thinning of epitaxial film, the I-V characteristics of membrane LED are significantly improved, and the negative capacitance accompanied by remarkable light emission becomes stronger for thinner membrane LED. The experimental results clearly exhibit the strong membrane thickness dependence. The electroluminescent intensity of membrane LED with the membrane thickness tm ∼ 3.74μm is ∼12.4 times higher than that of LED with silicon substrate. This work opens a feasible way to form high efficiency surface emitting device on GaN-on-silicon platform.

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“…Figures 4(a)-4(d) show the light emission images at different forward voltages of 3 to 3.6 V. The light emission in the thick p-electrode region is suppressed, and light is emitted from the neighboring thick p-electrode region owing to the current crowding effect. 21) The light emission increases as the forward voltage increases from 3 to 3.6 V. Because the suspended membrane is a highly confined planar waveguide structure, part of the LED emission is confined by the planar waveguide and laterally propagates inside the suspended membrane. 22,23) The lateral in-plane light propagation is evident by the light diffraction at the suspended membrane output facet.…”

mentioning

confidence: 99%

Monolithic integration of a suspended light-emitting diode with a Y-branch structure

Yuan

Cai

Gao

et al. 2016

Appl. Phys. Express

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We describe a double-sided process for the monolithic integration of a light-emitting diode (LED) and a Y-branch structure on a GaN-on-silicon platform. The suspended LED and highly confined waveguides are fabricated by silicon removal with back-side thinning of the suspended membrane. When the LED is turned on, part of the light emission is confined by a suspended rectangular waveguide, and the light propagates laterally. The guided light is then coupled into two branching rectangular waveguides and diffracted into the air at the output facets. The light output can be tuned by the LED, opening the potential for more sophisticated integrated photonic circuits.

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The spreading resistance of MOSFET's

Cited by 22 publications

References 8 publications

Extraction of the series resistance and the effective mobility in enhancement MOSFETs from weak to strong inversion using a single transistor

Extraction of the series resistance and the effective mobility in enhancement MOSFETs from weak to strong inversion using a single transistor

High efficiency membrane light emitting diode fabricated by back wafer thinning technique

Monolithic integration of a suspended light-emitting diode with a Y-branch structure

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