The state-of-the-art of GaAs and InP power devices and amplifiers

Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor

“…InAlAs/InGaAs high-electron-mobility transistors (HEMTs) on InP substrates have shown a high gain and a low noise at millimeter-wave frequencies compared with GaAs-based pseudormorphic HEMTs. [1][2][3] However, InP substrates are fragile, unavailable on a large scale and more expensive than GaAs substrates. On the other hand, the latter are more suitable for large-scale monolithic microwave integrated circuit (MMIC) production.…”

Barrier height dependence of Fano factor and 1/f noise effect on InGaP based Schottky barrier diode

“…Barrier height dependence of Fano factor and 1/f noise effect on InGaP based Schottky barrier diode Sutanu Mangal, 1,2 P. Ghelfi, 3 A. Bogoni, 3 We report a study on flicker noise reduction in the space charge limitation region of a Zn-Pd/ n-In 0.49 Ga 0.51 P Schottky barrier diode (SBD). A suitable model has been suggested to explain the barrier height dependence of the Fano factor.…”

“…Schottky contacts on group III-V semiconductors have wide applications in high speed electronic and optoelectronic devices such as diodes, field-effect transistors, high electron mobility transistors, solar cells, etc. [1][2][3][4][5] Schottky barrier diodes (SBDs) are the simplest metal-semiconductor contact devices, the understanding of which has great technological importance in electronics. Because indium gallium phosphide (In 0.49 Ga 0.51 P) is one of the most important materials for high-speed and low-power devices, studies on the electrical noise on InGaP based SBDs is essential for their application.…”

Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs Heterojunction Bipolar Transistors

“…InGaP/GaAs heterojunction bipolar transistors ͑HBTs͒ are widely used in wireless communication applications such as handheld phones and satellite communication links. [1][2][3][4][5][6][7][8][9][10] The radiation hardness of HBTs is one of the critical factors that need to be established for military, space, and nuclear industry applications. Previous results on AlGaAs/GaAs HBTs have indicated that these devices have superior ␥-radiation resistance to GaAs metal-semiconductor field effect transistors ͑MESFETs͒ due to the higher doping levels in the active regions.…”

“…The replacement of AlGaAs as the emitter material by InGaP has been prompted by improved resistance to oxidation, lower defect levels, higher etch selectivity, and improved contact resistances. 2,5,10 In this paper, we report a study of the effects of both ␥-radiation and proton radiation on the dc performance of InGaP/GaAs HBTs. The devices were exposed to either a 600 Ci cobalt 60 source for accumulated doses of 175 or 500 Mrad or to a 40 MeV proton beam in the Texas A&M cyclotron for doses of 5 ϫ 10 6 or 5 ϫ 10 9 cm Ϫ2 .…”