The States of Surface-Stabilized Ferroelectric Liquid Crystal with High-Pretilt Aligning Film

Abstract

The effect of punch through on the series resistance of n + np + single drift region Si HP [5082-0432] IMPATT diodes of capacity 0.02 pf around the X band has been studied. The computed result for series resistance fits well with the device data. The analysis shows that for a constant bias current density, when the space charge effect is not prominent, the value of series resistance decreases with the decrease of punch through, determined by the doping density and thickness of the active layer. The decrease of punch through produces an upward shift in the operating frequency of the device. It is also observed that an increase of punch through factor leads to a decrease in negative resistance, conversion efficiency and the susceptance of the device.

LEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal Surfaces

“…The P r of CS-2005 is larger than that of typical FLCs (0.02-0.18 mC/m 2 ). 18,19,24) The coercive electric field (E c ) was estimated to be 5.1 MV/m, which is dramatically lower than that of common organic ferroelectric materials such as P(VDF/TrFE) (50-100 MV/m). 12,15) Figure 4 shows the temperature dependences of E c and P r , at an applied voltage of 10 Hz.…”

“…[18][19][20] In general, the structure and molecular alignment of FLCs are stabilized in a cell with a narrowgap (e.g., 2 µm), which are thus called surface-stabilized FLC (SSFLC) cells. [21][22][23][24] SSFLC cells show a bistable state of spontaneous polarization. Since these two polarization directors can be switched by the external electric field and maintained without the field, SSFLC devices have attracted much attention for their application to nonvolatile memories and fast-switching displays.…”