A new LCD referred to as an "Advanced TFT-LCD" has been developed. It consists of both transmissive and reflective electrodes in every pixel. Its subjective legibility and characteristics, such as contrast ratio, color gamut, and luminance, have been investigated at several ambient illumination intensities. As a result, it was confirmed that Advanced TFT-LCDs offer better legibility than transmissive LCDs under any ambient illumination intensity. FIGURE 1 -Panel structure of the Advanced TFT-LCD.FIGURE 2 -Cross-sectional view of the Advanced TFT-LCD.

Deviation angle 6 of the layer normal away from the rubbing direction in surface-stabilized ferroelectric liquid crystal (SSF-LC) was studied using liquid crystal (LC) mixtures possessing smectic A(SmA) phase and cells with one rubbed substrate. The dependence of 6 on the properties of LC, cell spacing, temperature, and external field suggested that 6 originated from the twist in the nematic phase and electroclinic effect in SmA phase due to the surface field.

We have developed a novel super‐fast response (SFR) TFT‐LCD with an ultra‐wide temperature range. Both the turn‐on and turn‐off switching are forcibly controlled by applying an electric field. Response times of the SFR TFT‐LCD are over several times faster than those of conventional LCDs like MVA or IPS LCDs.

Abstract— We have realized the world's largest‐size 40‐in.‐diagonal TFT‐LCD by seamless panel‐connection technology. This technology can easily make a large display degrading affecting the advantages of TFT‐LCDs. In this paper, we discuss several techniques for a seamless connection.

The effect of punch through on the series resistance of n + np + single drift region Si HP [5082-0432] IMPATT diodes of capacity 0.02 pf around the X band has been studied. The computed result for series resistance fits well with the device data. The analysis shows that for a constant bias current density, when the space charge effect is not prominent, the value of series resistance decreases with the decrease of punch through, determined by the doping density and thickness of the active layer. The decrease of punch through produces an upward shift in the operating frequency of the device. It is also observed that an increase of punch through factor leads to a decrease in negative resistance, conversion efficiency and the susceptance of the device.