The structure and electrical characteristics of oxidized semi-insulating polycrystalline silicon

Abstract

Articles you may be interested inAnnealing effects on the electrical properties and microscopic structure of semiinsulating polycrystalline silicon films J. Appl. Phys. 75, 7916 (1994); 10.1063/1.356578Physical properties of semiinsulating polycrystalline silicon. I. Structure, electronic properties, and electrical conductivityThe influence of an oxidizing ambient on the structure and electrical characteristics of thin films of semi-insulating polysilicon (SIPOS) has been studied. It is shown that SIPOS films 135 nm thick can be completely oxidized to amorphous silicon dioxide after 24 h at 600°C in wet oxygen. The midgap interface state density after oxidation and postmetallization anneal is 4 X 1010 em -2 e V-I. We also show that this material is suitable for use as a low-temperature deposited gate dielectric for polycrystalline thin-film transistors.

The composition and structure of SIPOS: A high spatial resolution electron microscopy study

“…7 Early on, SIPOS was considered to be polycrystalline Si containing a large concentration of oxygen, up to -50 at. 11 They found that the maximum oxygen concentration attainable in asdeposited SIPOS was about 60 at. An early diffraction contrast/selected area diffraction transmission electron microscopy (TEM) and x-ray diffraction investigation of the structure of SIPOS films containing 15 to 40 at.…”