The structure and property characteristics of Mn-doped SiGe alloy nanowires prepared by catalyst-free growth

First-principles study of room-temperature ferromagnetism in transition-metal doped H-SiNWs

“…48 Sequentially, many other experimental and theoretical research groups investigated the magnetic properties of TM-doped Si and SiGe alloy nanomaterials. [49][50][51][52] To the best of our knowledge, no literature has reported the effect of transport direction (100, 110, and 111) on the magnetic properties and Curie temperature of Fe and Mn doped H-SiNWs based DMS. In this report, we have performed a comparative theoretical study of Fe and Mn doped H-SiNWs in order to investigate their room temperature DMS behavior.…”

Synthesis and high-temperature ferromagnetism of Fe-doped SiGe diluted magnetic semiconductor thin films

“…[1][2][3][4] Besides the most widely investigated III-V DMSs, 5,6 IV DMSs have attracted particular attention owing to their compatibility with the current mature Si integration technology. [7][8][9][10][11][12] However, most studies have mainly focused on Mn-doped IV semiconductors, [8][9][10][13][14][15][16][17][18][19][20] which often suffer from Mn-related clusters or second-phase precipitates, such as Ge 3 Mn 5 , 17,20 Ge 8 Mn 11 , 13 GeMn 3.4 , 19 and Si 1.7 Mn, 16 being easily formed during their growth. On the other hand, Fe-related clusters or precipitates are rarely observed in Fe-doped IV DMSs 11,12,[21][22][23][24][25] since Fe has a lesser tendency to form clusters than Mn in semiconductors.…”