The structure of 〈111〉B oriented GaP nanowires

Johansson, Jonas; Karlsson, Lisa; Svensson, Cecilia; Mårtensson, Thomas; Wacaser, Brent; Deppert, Knut; Samuelson, Lars; Seifert, Werner

doi:10.1016/j.jcrysgro.2006.10.175

Cited by 33 publications

(22 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That effect has been reported in Ref. [42] and was there explained by alternating {111} nanofacets accumulating to the sixfold {110} facets observed on a larger length scale. Secondly, we observe a complete rotation of about 30 • between x = 345.5 nm and x = 347.6 possibly introduced by a twin boundary or a switch from {110} facets to {112} facets.…”

Section: Resultssupporting

confidence: 75%

Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires

et al. 2014

View full text Add to dashboard Cite

We report on the development of electron holographic tomography towards a versatile potential measurement technique, overcoming several limitations, such as a limited tilt range, previously hampering a reproducible and accurate electrostatic potential reconstruction in three dimensions. Most notably, tomographic reconstruction is performed on optimally sampled polar grids taking into account symmetry and other spatial constraints of the nanostructure. Furthermore, holographic tilt series acquisition and alignment have been automated and adapted to three dimensions. We demonstrate 6 nm spatial and 0.2 V signal resolution by reconstructing various, previously hidden, potential details of a GaAs/AlGaAs core-shell nanowire. The improved tomographic reconstruction opens pathways towards the detection of minute potentials in nanostructures and an increase in speed and accuracy in related techniques such as x-ray tomography.

show abstract

Section: Resultssupporting

confidence: 75%

Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires

et al. 2014

View full text Add to dashboard Cite

show abstract

“…No stacking faults or twinning defects were observed in any of the GaSb nanowires (see Fig. 1d), in contrast to nanowires of other III-V materials grown in the /111SB direction (GaAs, InAs, GaP, InP) [5][6][7][8].…”

Section: Resultsmentioning

confidence: 87%

Characterization of GaSb nanowires grown by MOVPE

Jeppsson

Dick

Nilsson

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Many stacking faults are found in the GaAs segment of all the investigated nanowires. Stacking faults and twinning defects are commonly observed in GaAs nanowires [19] and also in most other classic III-V nanowires, such as GaP, InAs and InP [21][22][23]. A low stacking fault density is preferred in nanowires, since they may degrade the performance of nanowire devices.…”

Section: Composition and Crystal Qualitymentioning

confidence: 99%