The Study of Different Structuring Techniques for Creation of Non-Evaporable Getters

Boyko, A. N.; Гаев, Д. С.; Тимошенков, С. П.; Chaplygin, Yu. A.; Petrov, V.

doi:10.4236/msa.2013.48a007

Cited by 5 publications

(3 citation statements)

References 13 publications

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“…In addition, the developments aim to lower the activation temperature. A. Boyko [6] fabricated TiV getter films which can be activated by heating at 400°C, Y. Li [7] developed TiZrV getter films with an activation temperature of about 250°C. Mono and multilayer getter have also been studied in the last few years: C. C. Li [8] fabricated porous Ti getter film to increase the oxygen absorption capacity and reduce the reaction temperature; L. Tenchine [9] showed that the addition of a sub-layer lowers the activation temperature of Ti getter films.…”

Section: Introductionmentioning

confidence: 99%

Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging

Moulin

Agnus

et al. 2014

ECS Trans.

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In this work thermal diffusion of titanium through an ultrathin capping gold layer has been investigated as an alternative way to produce a getter film activated at low temperature. Ti out-diffusion from Au/Ti thin films was studied using four probe resistivity measurements, XPS analysis, residual stress measurements, SEM cross section observation and Ion Beam Etching coupled with mass spectrometry. The results show that a titanium oxide film is growing as the titanium out diffuses and comes in contact with traces of oxidizing species in N2 annealing gaz. The pumping capacity is large enough to integrate Au/Ti film as a low temperature getter film for wafer-level vacuum packaging.

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Section: Introductionmentioning

confidence: 99%

Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging

Moulin

Agnus

et al. 2014

ECS Trans.

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“…alkali earth metal such as Ca, Mg, and Ba) and (ii) non-evaporable getter (NEG) (i.e. transition or rare earth metals such as Zr, Ti, and Th) [6][7][8][9][10]. Evaporable getters react with released gas molecules to produce evaporable by-products, which limits their use in environments that require vacuum because the combined getters evaporate.…”

Section: Introductionmentioning

confidence: 99%

Controlled adsorption of gas molecules by tuning porosity of titanium film

Han,

Kim,

Lee

et al. 2024

Smart Mater. Struct.

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At the wafer-level package stage, the interior of the sensor can be easily converted into a vacuum environment. However, after packaging, degassing occurs due to the accumulation of fumes with additional processing, resulting in a significant reduction in sensor reliability. To counteract this, non-evaporable getter (NEG) film is commonly packaged together with the sensor to absorb the outgassing gas molecules and maintain a vacuum environment within the sensor. Most NEG films require an activation process to migrate the adsorbed gas molecules from the surface to the bulk by thermal annealing. Recently, NEG films have been considered to reduce the activation temperature and time to avoid heat damage. Depositing an anti-oxidant layer on NEG film or alloying the NEG film with metallic materials through co-sputtering to create a distinct valence state during activation was found to prevent further oxidation of NEG film. However, these methods require expensive materials and fabrication equipment. In this study, we demonstrate that a much lower activation temperature (T = 350 °C) and time (t = 10 min) for Ti NEG film can be achieved by controlling the surface morphology depending on the deposition method and condition, without requiring further treatment such as the deposition of a capping layer or co-sputtering. Increasing the grain size of the Ti NEG film results in a larger surface area, which enables more efficient adsorption of gas molecules. Additionally, higher porosity in the film increases the diffusion of gas molecules, thus enhancing the overall gas adsorption capacity. Our experiments show that the Ti NEG film, which was deposited at 7.8 Å/s using a sputtering method, exhibited a grain size of 411 nm and a surface roughness of 59.185 nm. Furthermore, after an activation process at 350 °C for 10 min, the atomic ratio of the adsorbed gas molecules was 23.14%.

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“…1(a)]. This requires relatively high temperatures (300-500 °C) [3][4][5][6][7][8] and/or very long annealing time, 9,10) which might be detrimental to the encapsulated device. In recent years many investigations were performed to reduce the activation temperature of NEG alloys films and an activation temperature of 240-250 °C was demonstrated recently for a 2 h annealing time.…”

Section: Introductionmentioning

confidence: 99%

Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging

Moulin

Lani

et al. 2015

Jpn. J. Appl. Phys.

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Non-evaporable getter (NEG) thin films based on alloys of transition metals have been studied by various authors for vacuum control in wafer-level packages of micro electro mechanical systems (MEMS). These materials have typically a relatively high activation temperature (300–450 °C) which is incompatible with some temperature sensitive MEMS devices. In this work we investigate the potential of Au/Ti system with a thin or ultrathin non oxidizable Au layer as a low activation temperature getter material. In this bilayer system, gettering activation is produced by thermal outdiffusion of titanium atoms through the gold film. The outdiffusion kinetics of titanium was modelled and characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS) at various temperatures. Results confirm that Au/Ti bilayer is a promising getter material for wafer-level packaging with an activation temperature below 300 °C for 1 h annealing time.

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The Study of Different Structuring Techniques for Creation of Non-Evaporable Getters

Cited by 5 publications

References 13 publications

Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging

Low Activation Temperature Au/Ti Getter Films for Wafer-Level Vacuum Packaging

Controlled adsorption of gas molecules by tuning porosity of titanium film

Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging

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