The modified Schomeit method for processing enthalpies is suggested, which provides for agreement between high-temperature data on C p both with a reliably measured value of and with derivative . The latter gives a "smoother" joining of dependences C p (T) obtained experimentally with different accuracy. The suggested procedure is applied to analysis of experimentally obtained distributions of heat capacity of cadmium telluride as a function of temperature, and a new approximating equation is obtained for the most reliable data in the range from 298 K to the melting point of CdTe. This procedure is compared to other known methods of simultaneous processing of C p (T) data. It is demonstrated that the values of heat capacity of CdTe recommended by us agree with reliably determined coefficients of thermal expansion (CTE) of this compound. The characteristic Debye temperature of cadmium telluride is estimated in a wide temperature range, and the pattern of its variation with temperature is analyzed.

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The results of observation of different structuring techniques of thin metal layers applied in micro system technologies are presented. The Ti V getter films formed by magnetron sputtering have been explored using scanning electron and atomic-force microscopy, Brunauer-Emmett-Teller method, thermogravimetric analysis and fractal geometry. The film sorption capacity for hydrogen given by thermogravimetry was of 7.7 m^3_·Pa·g^-1. To estimate the effective surface area, the fractal geometry tools were used and the calculated value of the specific surface area was about 155 m²/m³. The second object under investigation was a structure composed of micro- and mesoporous silicon and copper layer deposited electrochemically on the pore walls. Porous silicon when coupled with a reactive metal or alloy is expected to be an effective getter for micro system techniques. The use of porous silicon and specific conditions of depositions allows to form the structure of complex fractal type with a specific surface area of 167 m²/cm³.

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The results of studies relating to the use of porous silicon as the basis for the creation of nanostructured getter layers for MEMS are presented. New technical solutions, in which the porous silicon with pores of micro- and nanometer range is used as a matrix for the deposition of reactive metals or metal alloys, were developed. The research results can be used to create getters for MEMS, as well as in other areas which require the creation of structures with a developed surface.