The Use of Porous Silicon for Nanostructuring of Functional Metal Layers for MEMS

Тимошенков, С. П.; Гаев, Д. С.; Boyko, A. N.

doi:10.4028/www.scientific.net/amm.313-314.108

Cited by 3 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A black, thin layer that formed on the surface of the wafer was accidentally discovered and called porous silicon. After several decades, porous silicon was extensively studied for various applications, such as MEMS, 2 semiconductor devices, 3 solar cells and biomedical engineering. 4,5 In this study, PS was formed either by electrochemical anodisation (ECA), etching in HF-based solution or by chemical etching by oxidation reaction.…”

mentioning

confidence: 99%

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Immanuel

Chiang

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The effect of using high-power He-Cd laser irradiation for electrochemical etching on p-type silicon in hydrofluoric (HF) acid solution was investigated. Laser irradiation on the silicon surface combined with electrochemical etching process successfully controlled the formation of porous silicon (PS) in nano-scale structure. On the surface of the laser-irradiated silicon surface, the formation of nano porous silicon (NPS) during electrochemical etching was controlled by the laser wavelength and power. Then, the NPS was analysed along with physicochemical properties using analytical techniques. The luminous flux of the laser power was controlled with the help of the integrating sphere system. We designated this as the bandgap energy absorption (BEA) of electro-thermal reaction. The fabrication of NPS with laser-irradiation/electrochemical etching technology was feasible by controlling laser power (20 mW) up to a high luminescence flux value of 223 lm. NPS was used in the piratical application of microelectronic device.

show abstract

mentioning

confidence: 99%

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Immanuel

Chiang

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Study of morphological characteristic ofpor-Si formed using metal-assisted chemical etching by BET-method and fractal geometry

et al. 2016

View full text Add to dashboard Cite

Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation

Chiang,

Immanuel

2024

Optics

View full text Add to dashboard Cite

This study explores electrochemical etching to form porous silicon (PS), which has diverse biomedical and energy applications. Our objective is to gain new insights and drive significant scientific and technological advancements. Specifically, we study the effect of electrochemical etching of P-type silicon using laser irradiation in a hydrofluoric acid (HF) solution. The formation of the nanoscale PS structure can be successfully controlled by incorporating laser irradiation into the electrochemical etching process. The wavelength and power of the laser influence the formation of nanoporous silicon (NPS) on the surface during the electrochemical etching process. The luminous flux is monitored with the help of a customized integrating sphere system and an LED-based excitation source to find the light flux values distributed across the P-type nanolayer PS wafers. Analysis of the NPS and luminescence characteristics shows that the laser bandwidth controls the band gap energy absorption (BEA) phenomenon during the electrothermal reaction. It is demonstrated that formation of the NPS layer can be controlled in this combined laser irradiation and electrochemical etching technique by adjusting the range of the laser wavelength. This also allows for further precise control of the numerical trend of the luminous flux.

show abstract

The Use of Porous Silicon for Nanostructuring of Functional Metal Layers for MEMS

Cited by 3 publications

References 4 publications

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Study of morphological characteristic ofpor-Si formed using metal-assisted chemical etching by BET-method and fractal geometry

Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation

Contact Info

Product

Resources

About