The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

Abstract

Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation.

Low-power subthreshold to above threshold level shifters in 90nm and 65nm process

“…This leads to the total charge collected as a result of a charged particle hit to be reduced by orders of magnitude, if the supply voltage is scaled down sufficiently (down to the subthreshold region) [82]. Furthermore, reducing the supply voltage also reduces the impact of Parasitic bipolar effect due to reduced voltage across the pn junctions in the transistors, making parasitc bipolare devices less efficient, leading to further reduction of the collected charge [82,83]. On the other hand, reduction of the supply voltage also reduces the current drive of the transistors by up to several orders of magnitude, which contributes to slower recovery of the affected node and ultimately leads to increased SET pulse widths.…”