The synthesis and characterization of new [(BiSe)1.10]m[NbSe2]n, [(PbSe)1.10]m[NbSe2]n, [(CeSe)1.14]m[NbSe2]n and [(PbSe)1.12]m[TaSe2]n misfit layered compounds

Heideman, Colby L.; Nyugen, Ngoc; Hanni, J.; Lin, Qiyin; Duncombe, Scott; Johnson, David C.; Zschack, P.

doi:10.1016/j.jssc.2008.06.017

Cited by 63 publications

(75 citation statements)

References 18 publications

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“…The modulated elemental reactant (MER) method [18] allows synthesizing nanolaminate precursors, which resemble the intended product closely in layering sequence and composition. To create the desired precursor, a multi-step calibration of the deposition parameters to define stoichiometric ratios between the involved elements and to find the correct total amount of material in each elemental layer condensed onto the substrate is required [11].…”

Section: Structure and Compositionmentioning

confidence: 99%

Influence of interstitial V on structure and properties of ferecrystalline ([SnSe]1.15)1(V1+Se2)n for n=1, 2, 3, 4, 5, and 6

Falmbigl

Putzky

Ditto

et al. 2015

Journal of Solid State Chemistry

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Cite this article as: M. Falmbigl, D. Putzky, J. Ditto and D.C. Johnson, Influence of interstitial V on structure and properties of ferecrystalline ([SnSe]1.15)1(V1+xSe2)n for n=1, 2, 3, 4, 5, and 6, Journal of Solid State Chemistry, http://dx. AbstractA series of ferecrystalline compounds ([SnSe] 1.15 ) 1 (V 1+x Se 2 ) n with n = 1 -6 and a thin film V 1+x Se 2 were synthesized utilizing the modulated elemental reactant technique. The effect of interstitial V-atoms ranging from 0.13  x  0.42 in different compounds on structure and electrical properties of these intergrowth compounds is reported. The presence of the interstitial V-atoms for n > 1 was confirmed by Rietveld refinements as well as HAADF-STEM cross sections. The off-stoichiometry in the thin film V 1.13 Se 2 causes a suppression of the charge density wave, similar to the effect of non-stoichiometry observed for the bulk compound. The charge density wave of ([SnSe] 1.15 ) 1 (V 1+x Se 2 ) 1, however, is not affected by the non-stoichiometry due to its incorporation as volume inclusions or due to the quasi 2-dimensionality of the isolated VSe 2 layer. In the compounds ([SnSe] 1.15 ) 1 (V 1+x Se 2 ) n with n = 2 -6, the temperature dependence of the electrical resistivity approaches bulk-like behavior.

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Section: Structure and Compositionmentioning

confidence: 99%

Influence of interstitial V on structure and properties of ferecrystalline ([SnSe]1.15)1(V1+Se2)n for n=1, 2, 3, 4, 5, and 6

Falmbigl

Putzky

Ditto

et al. 2015

Journal of Solid State Chemistry

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“…Miyazaki et al 15 prepared polycrystalline samples of (Yb 1.90 S 2 ) 0.62 NbS 2 and obtained a ZT value of 0.1 at 300 K. A modulated elemental reactant method has been developed to fabricate thin films of the misfit-layer compounds with designed composition. 16,17 Low thermal conductivities were found, and the ability to tune the carrier concentration has been demonstrated, but ZT values of the compounds were not reported. 16,17 EXPERIMENTAL PROCEDURES Both TiS 2 and (SnS) 1.2 (TiS 2 ) 2 were prepared using the solid-liquid-vapor reaction method.…”

Section: Introductionmentioning

confidence: 99%

“…16,17 Low thermal conductivities were found, and the ability to tune the carrier concentration has been demonstrated, but ZT values of the compounds were not reported. 16,17 EXPERIMENTAL PROCEDURES Both TiS 2 and (SnS) 1.2 (TiS 2 ) 2 were prepared using the solid-liquid-vapor reaction method. 18 For both TiS 2 and (SnS) 1.2 (TiS 2 ) 2 , the constituent elements were weighed and mixed according to the stoichiometric ratio.…”

Section: Introductionmentioning

confidence: 99%

Intercalation: Building a Natural Superlattice for Better Thermoelectric Performance in Layered Chalcogenides

Wan

Wang

et al. 2011

Journal of Elec Materi

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A natural superlattice with composition (SnS) 1.2 (TiS 2 ) 2 , built by intercalating a SnS layer into the van der Waals gap of layered TiS 2 , has been directly observed by high-resolution transmission electron microscopy (HRTEM). The thermoelectric performance is improved in the direction parallel to the layers because the electron mobility is maintained while simultaneously suppressing phonon transport, which is attributed to softening of the transverse sound velocities due to weakened interlayer bonding. In the direction perpendicular to the layers, the lattice thermal conductivity of (SnS) 1.2 (TiS 2 ) 2 is even lower than the predicted minimum thermal conductivity, which may be caused by phonon localization due to the translational disorder of the SnS layers parallel to the layers. Moreover, we propose a large family of misfit-layer compounds (MX) 1+x (TX 2 ) n (M = Pb, Bi, Sn, Sb, rare-earth elements; T = Ti, V, Cr, Nb, Ta; X = S, Se; n = 1, 2, 3) with a natural superlattice structure as possible candidate high-performance thermoelectric materials.

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“…[7][8][9] These compounds and several others in this family of compounds have been made as disordered polytypes or ferecrystals by using designed precursors. [10,11] These compounds consist of interleaved layers of PbSe and NbSe 2 . Each NbSe 2 layer consists of a hexagonal layer of niobium between hexagonal layers of selenium with the niobium atoms in trigonal prisms or octahedra of selenium.…”

mentioning

confidence: 99%

Synthesis of Inorganic Structural Isomers By Diffusion‐Constrained Self‐Assembly of Designed Precursors: A Novel Type of Isomerism

et al. 2014

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The structure of precursors is used to control the formation of six possible structural isomers that contain four structural units of PbSe and four structural units of NbSe2: [(PbSe)1.14]4[NbSe2]4, [(PbSe)1.14]3[NbSe2]3[(PbSe)1.14]1[NbSe2]1, [(PbSe)1.14]3[NbSe2]2[(PbSe)1.14]1[NbSe2]2, [(PbSe)1.14]2[NbSe2]3[(PbSe)1.14]2[NbSe2]1, [(PbSe)1.14]2[NbSe2]2[(PbSe)1.14]1[NbSe2]1[(PbSe)1.14]1[NbSe2]1, [(PbSe)1.14]2[NbSe2]1[(PbSe)1.14]1[NbSe2]2[(PbSe)1.14]1[NbSe2]1. The electrical properties of these compounds vary with the nanoarchitecture. For each pair of constituents, over 20,000 new compounds, each with a specific nanoarchitecture, are possible with the number of structural units equal to 10 or less. This provides opportunities to systematically correlate structure with properties and hence optimize performance.

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The synthesis and characterization of new [(BiSe)1.10]m[NbSe2]n, [(PbSe)1.10]m[NbSe2]n, [(CeSe)1.14]m[NbSe2]n and [(PbSe)1.12]m[TaSe2]n misfit layered compounds

Cited by 63 publications

References 18 publications

Influence of interstitial V on structure and properties of ferecrystalline ([SnSe]1.15)1(V1+Se2)n for n=1, 2, 3, 4, 5, and 6

Influence of interstitial V on structure and properties of ferecrystalline ([SnSe]1.15)1(V1+Se2)n for n=1, 2, 3, 4, 5, and 6

Intercalation: Building a Natural Superlattice for Better Thermoelectric Performance in Layered Chalcogenides

Synthesis of Inorganic Structural Isomers By Diffusion‐Constrained Self‐Assembly of Designed Precursors: A Novel Type of Isomerism

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