The Temperature Dependence of the Resistivity of Liquid Gallium to 1000 °C

Yahia, J.; Thobe, Josef

doi:10.1139/p72-339

Cited by 10 publications

(6 citation statements)

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“…45 To better understand the nature of these filaments, the temperature coefficient of resistance was measured for devices in the low-resistance ON state. 96,97 The thermal expansion coefficient of E-GaIn/GaO x /SiO x /p + -Si devices was determined to be 0.0007 K −1 , which agrees well with the value for metallic gallium (0.0004−0.0007 K −1 ), 98,99 strongly suggesting that the filaments are indeed metallic gallium. The I−V sweeps measured for these devices (Figure 1c, Figure 3a, and Figure S3) exhibit classical ECM behavior with asymmetric SET/ RESET voltages.…”

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confidence: 68%

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

et al. 2021

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In this work, native GaO x is positioned between bulk gallium and degenerately doped p-type silicon (p + -Si) to form Ga/GaO x /SiO x /p + -Si junctions. These junctions show memristive behavior, exhibiting large current−voltage hysteresis. When cycled between −2.5 and 2.5 V, an abrupt insulator−metal transition is observed that is reversible when the polarity is reversed. The ON/ OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10 8 and retain the ON and OFF resistive states for up to 10 5 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

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confidence: 68%

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

et al. 2021

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“…The left part shows the behaviour of films in the amorphous phase (branch I) and crystalline phases (branches II-IV). In the right part is shown the electrical resistivity of a bulk sample at the transition "solid-liquid" [11,12]. The films are condensed at low temperature.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of the electrical resistivity in amorphous metals

1973

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In amorphous metals the electrical resistivity increases linearly in the temperature range from 2 to 40 K. This result differs fundamentally from the nonlinear behaviour known for crystalline metals and it suggests the conduction electrons not to be scattered by the vibrations of the amorphous point lattice. The temperature dependent part of the resistivity in anaorphous metals is explained with scattering of conduction electrons by fluctuations of p-electrons. Properties of Amorphous MetalsAmorphous metals can be produced by condensation of the metal vapour onto a cold substratum [l]. In general, additions of other components are necessary. Amorphous metals are metastable and exist only below a temperature of about the same order of magnitude as the Debye temperature. The transition "amorphous-crystalline" occurs irreversibly and is connected with a latent heat [2,3]. From electronand X-ray diffraction experiments [4,5] it is known that the structure of amorphous metals is very much the same as that of the corresponding liquid metals [6]. Crystalline metal films growing from the vapour phase show elastic stress. The same is true for films of amorphous semiconductors and glasses. Amorphous metals, however, grow without any mechanical stress [7]. In analyzing this fact one has to keep in mind that in the crystalline state these metals have covalent bonds due to the p-electrons. The result for amorphous metals seems to indicate that these covalent bonds are broken, which means, the metal atoms in the amorphous phase are less tightly bound than those in the crystalline phase. Amorphous metals have a higher specific heat than crystalline metals [3,8]. Ewert [8] measured the specific heat between 5 and 8 K and, in the case of Bi, he found a T3-1aw, corresponding to the vibrations of an elastic continuum. The Debye temperature of the amorphous * Parts of this work have been reported by D. Korn at the 6th Summer School for Superconductivity of the "Fachausschul3 Tiefe Temperaturen der Deutschen Physikalischen Gesellschaft" in Pegnitz/Oberfranken, 1970.

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“…The change in the DC resistivity with temperature is linear above 100°C with a slope of 0.0194 µΩ•cm•°C -1 . 4 This indicates that the change in the DC resistivity for a change in temperature from 400 K to 350 K is 0.97 µΩ•cm, reducing the DC resistivity from the 400K value of 34.2 µΩ•cm to the 350 K value of 33.2 µΩ•cm. This reduces γ from 0.968 eV at 400 K to 0.940 eV at 350 K. Overall, this leads to an increase in the maximum value of Q LSP (Eqn S2) from 5.51 at 400 K to 5.67 at 350 K.…”

Section: Effect Of Temperature On the Drude Scattering Ratementioning

confidence: 98%

“…Trends in Q LSP and Q SPP with alloy concentration. 4. Effect of temperature on the Drude scattering rate.…”

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Eutectic Liquid Alloys for Plasmonics: Theory and Experiment

Blaber¹,

Engel²,

Vivekchand³

et al. 2012

Nano Lett.

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We report a method based on density functional theory molecular dynamics that allows us to calculate the plasmonic properties of liquid metals and metal alloys from first principles with no a priori knowledge of the system. We show exceptional agreement between the simulated and measured optical constants of liquid Ga and the room temperature liquid In-Ga eutectic alloy (T(m) = 289 K). We then use this method to analyze the plasmonic properties of various alloy concentrations in the In-Ga system. The plasmonic performance of the In-Ga system decreases with increasing In concentration. However, the benefits of a room-temperature plasmonic liquid are likely to outweigh the minor reduction in plasmonic performance when moving from pure Ga to the eutectic composition. Our results show that density functional theory molecular dynamics can be used as a predictive tool for studying the optical properties of liquid metal systems amenable to plasmonics.

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The Temperature Dependence of the Resistivity of Liquid Gallium to 1000 °C

Abstract: The electrical resistivity of liquid gallium has been measured to 1000 °C and found to be linear over the entire range measured, the temperature coefficient of resistivity being 0.0194 ± 0.0005 μΩ cm °C−1. A discussion of our results in terms of the theory is given.

Cited by 10 publications

References 1 publication

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Temperature dependence of the electrical resistivity in amorphous metals

Eutectic Liquid Alloys for Plasmonics: Theory and Experiment

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