12th IEEE International Conference on Semiconductor Laser 1990
DOI: 10.1109/islc.1990.764415
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The Temperature Dependence of the Threshold Current for InGaAlP Visible Light Lasers

Masayuki Ishikawa
1
,
Kazuhiko Itaya2,
H. Shiozawa3
et al.
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Cited by 4 publications
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“…The propagation loss ai is estimated to be 4 . 2~m -~, which is around onefourth of the conventional loss-guided laser [3]. The internal quantum efficiency Tli is estimated to be 90%.…”
Section: Laser Characteristicsmentioning
confidence: 98%

AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure

Kidoguchi
1
,
Kamiyama
2
,
Mannoh
3
et al. 1992
International Technical Digest on Electron Devices Meeting
0
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0
0
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“…The propagation loss ai is estimated to be 4 . 2~m -~, which is around onefourth of the conventional loss-guided laser [3]. The internal quantum efficiency Tli is estimated to be 90%.…”
Section: Laser Characteristicsmentioning
confidence: 98%

AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure

Kidoguchi
1
,
Kamiyama
2
,
Mannoh
3
et al. 1992
International Technical Digest on Electron Devices Meeting
0
0
0
0
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show abstract

Effects of nonradiative recombination on the temperature characteristics of threshold current density in 670 nm GaInAsP-AlGaAs visible lasers

Chong
1
,
Kishino
2
1991
IEEE J. Quantum Electron.
10
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3
0
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Temperature dependence of GaAs/AlGaAs multiquantum barrier lasers

Takagi
1
,
Iga
2
1992
IEEE Photon. Technol. Lett.
9
0
3
0
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