The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion Method

Kaźmierski, K.; Huber, A. M.; Morillot, G.; Cremoux, B. de

doi:10.1143/jjap.23.628

Cited by 43 publications

(12 citation statements)

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“…Theoretical analysis of Zn diffusion shows that the activation energy of Zn in InP is 1.25 eV for the diffusion through the interstitial site and 0.37 eV through the substitutional site. 9 The experimentally obtained activation energy of Zn in InP was 1.63 eV in the case of closedampoule diffusion. 10 In our case, the activation energy is close to that of the diffusion through the substitutional site.…”

Section: Resultsmentioning

confidence: 96%

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The characteristics of Zn-doped InP using spin-on dopant as a diffusion source

Yoon

Lee

Yeo

et al. 2002

Journal of Elec Materi

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INTRODUCTIONThe doping process of Zn is widely used for fabricating InP-based optoelectronic devices. Methods generally used for Zn doping in InP are in-situ doping during the growth and postgrowth ex-situ doping, such as closed ampoule diffusion and diffusion from evaporated Zn-thin film. In-situ Zn doping by metal-organic chemical vapor deposition shows low doping efficiency due to the high-equilibrium vapor pressure of Zn. 1 Moreover, the hole concentration saturates approximately at 1-2 ϫ 10 18 /cm 3 , presumably due to a similar self-concentration mechanism.The most widely used method of Zn doping after the growth step is closed-ampoule Zn diffusion. This method results in a net-acceptor concentration that is much smaller than the Zn concentration. 2 Activation efficiency is about 0.1-10%. Photoluminescence (PL) measurement is quite practical in the investigation of Zn-doped InP. The interstitial and substitutional impurities can be identified from the PL spectrum. The PL characteristics of Zn-doped InP using the closed-ampoule diffusion method were presented by Montie et al. 3 The interstitial donor concentration, N d , after diffusion was not negligible, and the acceptors were partly compensated by the interstitial donors so that the measured net-acceptor concentration was smaller than the Zn concentration. The PL measurement showed dominant donor-to-acceptor (D-A) peak after Zn diffusion. Band-to-acceptor (B-A) peak appeared only after activation anneal. The PL of Zn-doped InP by diffusion from evaporated Zn-thin film showed a similar spectrum with that of the closed ampoule method. 4 This means that the substitutional acceptor is compensated by interstitial Zn acting as a donor. The net hole concentration did not exceed 5 ϫ 10 18 /cm 3 .A doped spin-on glass was used to dope the III-V compound semiconductors. 5 There have been some reports on the Zn diffusion into InP from the spin-on film. 6 Diffusion depth properties can be controlled using this method with In, As, or P codoped spin-on film. 7 In this paper, we describe the method of Zn doping in InP using a spin-on dopant as a diffusion source. The main advantage of this method is that it is carried out in an open system without requiring special treatment to prevent thermal decomposition of the volatile group V component. The actual diffusion process essentially entails the diffusion of Zn through a SiO 2 layer and then into the InP layer. The function of the SiO 2 layer is to preclude chemical or physical effects that may damage the substrate. Area selective doping is possible with a patterned oxide or nitride layer.The optical characteristics of the Zn-doped InP layer were analyzed using a low-temperature PL method. The doping properties are characterized by the differential Hall measurement and secondary ion mass spectrometry (SIMS).Zn diffusion into InP was carried out ex-situ using a spin-on dopant as a diffusion source. The characteristics of Zn-doped InP are analyzed using low-temperature photoluminescence (PL), differential Hall measurement, ...

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Section: Resultsmentioning

confidence: 96%

“…This diffusion mechanism needs higher activation energy than diffusion through the substitutional site. 9 On the contrary, the sample annealed at 450°C shows a relatively high, deep-level transition peak. It was reported that the deep level remains as an effective recombination center even at room temperature.…”

Section: Resultsmentioning

confidence: 99%

The characteristics of Zn-doped InP using spin-on dopant as a diffusion source

Yoon

Lee

Yeo

et al. 2002

Journal of Elec Materi

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“…As a result, creating ohmic contacts to the p-type InP NWs becomes increasingly difficult the lower the doping 9 . An alternative pathway for doping is indiffusion of dopants from gas phase at high temperatures, which has been extensively studied for thin films [9][10][11][12][13][14][15][16] , but has been applied to NWs only recently for materials including InAs 17,18 , Si 19,20 and ZnO 21 . With diffusion doping, electrical transparency to the NW contacts can be increased significantly via high carrier concentrations near the surface 17,19 .…”

Section: This Is the Preprint Author Manuscript Ofmentioning

confidence: 99%

InP nanowire p-type doping via Zinc indiffusion

Haggrén

Otnes

Mourão

et al. 2016

Journal of Crystal Growth

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InP nanowire p-type doping via Zinc indiffusionHaggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars Growth, 451, 18-26. DOI: 10.1016/j.jcrysgro.2016 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. AbstractWe report an alternative pathway for p-type InP nanowire (NW) doping by indiffusion of Zn species from the gas phase. The indiffusion of Zn was performed in a MOVPE reactor at 350 -500 °C for 5 -20 min with either H 2 environment or additional phosphorus in the atmosphere. In addition, Zn 3 P 2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate interstitial Zn. The InP NWs were characterized with photoluminescence and electrical measurements. The acquired carrier concentrations were in order of >10 17 cm -3 for NWs without post-annealing, and up to 10 18 cm -3 for NWs annealed with the Zn 3 P 2 shells. The indiffused Zn was evident additionally in the photoluminescence measurements.

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“…21 The often observed high diffusivity of Zn atoms would seem to restrict the possibility of getting abrupt doping profiles. [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] However, doping superlattices ͑so-called nipi structure͒ with Zn as p-type dopant have been successfully fabricated. [22][23][24][25] Furthermore, a small Zn diffusion coefficient of 6.5ϫ10 Ϫ14 cm 2 /s has been reported in the case of unin-tentional diffusion.…”

Section: Introductionmentioning

confidence: 99%