1979
DOI: 10.1063/1.90575
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The thermal-expansion parameters of some GaxIn1−xAsyP1−x alloys

Abstract: The coefficient of thermal expansion has been determined in the temperature range 25–400 °C for InP, the ternary alloy Ga0.47In0.53As, and the quaternary alloy Ga0.26In0.74As0.40P0.60 grown on (100) InP by liquid-phase epitaxy. This parameter is (4.56±0.10) ×10−6/°C for InP, (5.42±0.10) ×10−6/°C for Ga0.26In0.74As0.60P0.40, and (5.66±0.10) ×10−6/°C for Ga0.47In0.53As.

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Cited by 82 publications
(14 citation statements)
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“…The thermal expansion of the grating constant d was taken into account with a temperature coefficient of 4.56ϫ10 Ϫ6 /K. 7 It accounts for about 5% of the observed wavelength shifts. The data were corrected for material dispersion.…”
Section: Resultsmentioning
confidence: 99%
“…The thermal expansion of the grating constant d was taken into account with a temperature coefficient of 4.56ϫ10 Ϫ6 /K. 7 It accounts for about 5% of the observed wavelength shifts. The data were corrected for material dispersion.…”
Section: Resultsmentioning
confidence: 99%
“…[12] Using d-spacing values, the a and c lattice parameters of the Al x Ga 1-x N epilayers were calculated using the Jade 6.5 software package developed by Materials Data Inc. based on the XRD measurement results; the parameters are summarized in Table 1. The lattice parameters, i.e., a, c, and c/a ratios, and internal parameter u, which is defined as u = a 2 / (3c 2 ) + 0.25, [13] were calculated for the Al x Ga 1-x N epilayers based on the XRD measurement results and are summarized in Table 1.…”
Section: Xrd Measurementsmentioning
confidence: 99%
“…Using the experimental results for InP, and plugging in the value of thermal expansion ratio 5ϫ10 Ϫ6 /°C, 8 and the temperature coefficient of the refractive index 1ϫ10…”
mentioning
confidence: 99%