The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors

Kraner, H.W.; Li, Z.; Fretwurst, E.

doi:10.1016/0168-9002(93)90376-s

Cited by 65 publications

(19 citation statements)

References 4 publications

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“…8, referring to both the irradiated and the non-irradiated detector. Such predictions well compare with published data [16], [17], [18], To this regard, it should be mentioned that in this set of simulation no load was assumed to terminate the strips: smoother current peaks should have been obtained if a reactive load were connected, accounting for the finite shaping time of the read-out amplifier. Nevertheless, charge sharing between strips is correctly predicted, the relative peak amplitudes matching those reported in [17].…”

Section: E T E C T O R Simulationsupporting

confidence: 54%

Comprehensive modeling of silicon microstrip detectors

Passeri

Ciampolini

Baroncini

et al. 1997

IEEE Trans. Nucl. Sci.

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ances, leakaae currents, etc.In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of DC, AC and transient responses of a single-sided, Dc-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of impact-generated carriers under the combined action of ohmic and diffusive forces is hence accounted for. Application to radiation tolerance studies is also introduced.In this paper, the application of numerical device simulation to the analysis of high-resistivity, single-sided silicon microstrip detectors is illustrated; besides carrying out the complete characterization of equivalent-circuit parameters, we present a novel approach to the simulation of sensors' active behavior, i.e., to the analysis of charge collection phenomena. This has been made possible by means of a suitably "customized" transient simulation technique. Details on the actual characteristics of the simulation tool are presented in sect. 2, with particular emphasis on the features introduced in order to model the charge-collection dynamics. .Simulation results are presented in Sect. 3: here, radiation influence over a couple of important detector-design parameters (namely, the depletion voltage and the strip capacitance) has been evaluated by properly adjusting the oxide charge and the effective doping concentration. Sect. 4 below is more specifically devoted to the analysis of the charge collection mechanisms: the timedomain sensor response to a particle crossing the detector is simulated, from which the spatial resolution is estimated.

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Section: E T E C T O R Simulationsupporting

confidence: 54%

Comprehensive modeling of silicon microstrip detectors

Passeri

Ciampolini

Baroncini

et al. 1997

IEEE Trans. Nucl. Sci.

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“…Faster drift of electrons compared to holes, their lower trapping and presence of high electric field in the region close to the readout electrodes even below full depletion all favour n-side readout on p-type material [5,6]. Bulk damage in silicon causes change of effective dopant concentration, increase of leakage current [7] and trapping of charge carriers [8]. In this study we show measurements of charge carrier trapping in p-type material.…”

Section: Introductionmentioning

confidence: 93%

Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

Cindro

Kramberger

Lozano

et al. 2006

2006 IEEE Nuclear Science Symposium Conference Record

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Trapping times of drifting electrons and holes were measured in high resistivity standard, oxygenated and magnetic Czochralski p-type materials with charge correction method. Diodes were irradiated with neutrons up to equivalent fluence Φ eq =3x10 14 cm -2 . Trapping times were parameterized as 1/τ=βΦ. Average β was measured to be β e =4.2x10 -16 cm 2 ns -1 for electrons and β h = 4.3x10 -16 cm 2 ns -1 for holes.

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“…To study the charge collection and charge transport in the sensors, the instantaneous currents which are induced in the electrodes by the moving charges are measured (Transient Current Technique -TCT [16,17,18]). The multi-channel TCT setup described in detail in Ref.…”

Section: Tct Measurementsmentioning

confidence: 99%

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Poehlsen

Fretwurst

Klanner

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tUsing multi-channel time-resolved current measurements (multi-TCT), the charge collection of p þ n silicon strip sensors for electron-hole pairs produced close to the Si-SiO 2 interface by a focussed subnanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO 2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p þ n silicon sensors is discussed.

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The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors

Cited by 65 publications

References 4 publications

Comprehensive modeling of silicon microstrip detectors

Comprehensive modeling of silicon microstrip detectors

Trapping of Electrons and Holes in p-type Silicon Irradiated with Neutrons

Charge losses in segmented silicon sensors at the Si–SiO2 interface

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