Theoretical analysis of diffused quantum-well lasers and optical amplifiers

Choy, Wallace C. H.; Chan, K. S.

doi:10.1109/jstqe.2003.818842

Cited by 6 publications

(3 citation statements)

References 30 publications

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“…For static (permanent) methods, the eigenstates and thus transition energies can be tuned by modifying the composition of the compound semiconductors from binary to ternary such as Zn x Cd 1−x Se [11] and Zn x Mg 1−x Se [12] or more complicated compositions such as Zn x Mg 1−x Se y Te 1−y [13] and Zn x Cd y Mg 1−x−y Se [14]. Besides, the quantum confinement structures of quantum dots [15] and quantum wells (see, for example, [16,17]) have been used to adjust the transition energies. Once the quantum confinement structures and the material compositions are determined, the emission peak can be confirmed.…”

Section: Introductionmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2 eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2:7 eV. When the temperature is reduced to 150 K, the peak wavelength shifts to 2:3 eV with yellowish emission and then blue emission with the peak at 2:7 eV at temperature less than 50 K. The overall wavelength shift of 700 meV is obtained as compared to the conventional ZnSe of about 100 meV (i.e., sevenfold extension). The ZnSe nanostructures with enhanced wavelength shift can potentially function as visible light temperature-indicator. The color change from red to yellowish and then to blue is large enough for the nanostructures to be used for temperature-sensing applications. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width half-maximum, and (iii) the peak photon energy of each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra, and the frequency of the local vibrational mode of the emission centers is determined.

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Section: Introductionmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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“…Due to the rapid advancement in microelectronics technology [64,65] in the last decade, research in the domain of semiconductor nanostructure has been carried out to a great extent by both theoretical [4,66] and experimental workers [5,6]. Quantum well waveguide is fabricated by ion implantation technique using InGaAsP/InP material composition.…”

Section: Introductionmentioning

confidence: 99%

Electronic Band Structure of Quantum Cascade Laser

Deyasi¹

2017

Quantum Cascade Lasers

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Multiple quantum well structure is the subject of theoretical and experimental research over the last two decades due to the possibility of making novel electronic and optoelectronic devices. The phenomenon of resonant tunneling makes it a prime candidate for all tunneling-based quantum devices with one-dimensional coninement. THz laser design using multilayered low-dimensional semiconductor structure is one such example, where miniband formation and its energy diference with lowest quantum state play crucial factor in governing device performance. Quantum cascade laser (QCL) is one of such candidate, which speaks in favor of research using multiple-quantum-well (MQW) structure. In the proposed chapter, transmission coeicient of multiple quantum-well structure is numerically computed using propagation matrix technique, and its density of states is calculated in the presence and absence of electric ield applied along the direction of quantum coninement. Absorption coeicient is also calculated for its possible application as optical emiter/detector. Based on the electronic and photonic properties investigated, electronic band structure of the quantum cascade laser (formed using the MQW structure) is computed. Formation of miniband is tailored with variation of external bias is shown.

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“…Selective area bandgap tuning of multiple quantum well structures (MQWs) has been an ongoing task in optoelectronic device fabrication in the past few decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. This matter is of particular importance in the fabrication of high-performance laser diodes and photonic integrated circuits [18][19][20][21][22]. Among the variety of available techniques a great deal of attention has been focused on induced disordering of MQWs by impurityfree vacancy diffusion (IFVD), due to its inherent spatial selectivity between adjacent regions and its ability to conserve the electrical properties of the disordered and non-disordered sections alike.…”

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confidence: 99%