The reflectance anisotropy has been calculated by microscopic tight-binding theory for various configurations of the As-rich GaAs(100) c͑4 3 4͒ and ͑2 3 4͒ reconstructions, based on precise atomic coordinates from ab initio total-energy minimization. The comparison to experimental reflectance anisotropy in combination with scanning tunneling microscopy and low energy electron diffraction allows one to identify precise correlations between structural units and optical features. Optical spectroscopy has become an important tool of surface analysis in the last years, due to its high sensitivity and in situ applicability [1]. In particular, reflectance anisotropy spectroscopy (RAS) is increasingly used for monitoring the growth of epitaxial structures in molecular beam epitaxy (MBE) or in metal organic vapor pressure epitaxy (MOVPE) [1][2][3][4]. However, theoretical understanding is needed in order to fully exploit its potential.Among the technologically important (100) surfaces of III-V semiconductors, the most intensively studied "prototype" is GaAs(100). A variety of different reconstructions, dependent on surface stoichiometry, exist; the three main reconstructions are the As-rich c͑4 3 4͒, the Asrich ͑2 3 4͒͞c͑2 3 8͒, and the Ga-rich ͑4 3 2͒͞c͑8 3 2͒ phases [2][3][4][5][6]. Several structural models of the As-rich phases are discussed in the literature [7-9] (see Fig. 3): At high As coverage the c͑4 3 4͒ phase should consist of three top As dimers bonded to the next complete As monolayer. Annealing up to around 400 ± C leads to the ͑2 3 4͒͞c͑2 3 8͒ phase. Total energy calculations [7][8][9] predict two different stable ͑2 3 4͒ geometries depending on the preparation conditions: the so-called b2 and the a structure. The b2, containing two top As dimers and one As dimer in the exposed third layer, accounts for the ͑2 3 4͒͞c͑2 3 8͒ phase. The so-called a structure is characterized by Ga dimers in the second layer besides the two top As dimers.The local atomic structure of the surface has often been claimed to play a key role in determining the surface optical anisotropy [1][2][3][4][5]. Hence, using a reliable theoretical description it should be possible to relate the optical response to the atomic surface structure. At present, few examples of good agreement between experiments and calculations of the optical response based on the one-electron band structure approximation, employing semiempirical tight-binding [10][11][12] as well as ab initio plane-wave expansions [13], are available. For GaAs(100), however, theoretical results are rather unsatisfactory [14,15], and recently it was hypothesized that RAS line shapes in many cases may have little to do with the atomic structure of the surface, but are rather determined by surface-induced changes of excitonic and local-field effects on bulk transitions [16,17] which are not included in the above mentioned calculations.In this work, we demonstrate that calculations based on the one electron band structure approximation indeed yield a good description of experiment...