Theoretical and experimental study of (Ga1-xFex)2O3 ternary alloys

Mia, Dalim; Samuels, Brian C; Talukder, Abdul Ahad; Borges, Pablo D.; Scolfaro, L. M. R.; Geerts, Wilhelmus; Droopad, R.

doi:10.1016/j.jcrysgro.2021.126353

Cited by 5 publications

(3 citation statements)

References 65 publications

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“…The growth of monoclinic β-Ga2O3 and their alloys have been reported with pulsed laser deposition (PLD) [13], molecular beam epitaxy (MBE) [5], and metal-organic chemical vapor deposition (MOCVD) [14]. The MOCVD method is extensively used for homoepitaxial growth of β-Ga2O3 on (001), (100), (010), and (̅ 201) β-Ga2O3 substrates.…”

Section: Introductionmentioning

confidence: 99%

“…It is difficult to grow high-quality thick β-Ga2O3 and alloys on foreign substrates. The reported growths were limited to thickness in the 50 -300 nm range due to an increase in surface roughness with thickness [5], [13], [14], [15]- [17]. A common method of getting phase pure 0.5-1 µm thick Ga2O3 is by growing amorphous or mixed phase Ga2O3 films and annealing them ≥ 900 o C to create a stable β-Ga2O3 [18], [19].…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Jewel

Hasan

Crittenden

et al. 2023

Oxide-Based Materials and Devices XIV

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We demonstrated a metal-organic chemical vapor deposition (MOCVD) of smooth and thick monoclinic phase-pure gallium oxide (Ga2O3) on c-plane sapphires using silicon-oxygen bonding (SiOx) as a phase stabilizer. We were able to grow ~580nm thick β-Ga2O3 on sapphire by MOCVD at 700 oC through phase stabilization using silane. The samples grown with silane show a reduction in the surface roughness and resistivity from 10 nm to 5 nm and from 371 Ω.cm to 136 Ω.cm, respectively. X-ray diffraction (XRD) reveals a pure-monoclinic phase. Our findings indicate that a thick, phase-pure β-Ga2O3 can be grown on c-plane sapphire, which can lead to its growth on thermally conducting substrates which is critical for creating power devices with better thermal management.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Jewel

Hasan

Crittenden

et al. 2023

Oxide-Based Materials and Devices XIV

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“…[1] The growth of monoclinic β-Ga 2 O 3 and their alloys have been reported using different techniques. [2,10,11] Two other polymorphs of Ga 2 O 3 , namely the corundum (α) and orthorhombic (κ) phases, have bandgap in the 4.4-5.3 eV range. [3,12] In κ-Ga 2 O 3 , the orthorhombic domains are rotated 120°against each other, forming a pseudo-hexagonal structure and often called ε-Ga 2 O 3 ; thus, ε-Ga 2 O 3 and κ-Ga 2 O 3 terms are used interchangeably to refer to orthorhombic Ga 2 O 3 in literature.…”

Section: Introductionmentioning

confidence: 99%

Phase Stabilized MOCVD Growth of β‐Ga₂O₃ Using SiO_x on c‐Plane Sapphire and AlN/Sapphire Template

Jewel

Hasan

Crittenden

et al. 2023

Physica Status Solidi (a)

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The growth of monoclinic phase-pure gallium oxide (β-Ga 2 O 3 ) layers by metalorganic chemical vapor deposition on c-plane sapphire and aluminum nitride (AlN) templates using silicon-oxygen bonding (SiO x ) as a phase stabilizer is reported. The β-Ga 2 O 3 layers are grown using triethylgallium, oxygen, and silane for gallium, oxygen, and silicon precursors, respectively, at 700 °C, with and without silane flow in the process. The samples grown on sapphire with SiO x phase stabilization show a notable change from samples without phase stabilization in the roughness and resistivity, from 16.2 to 4.2 nm and from 85.82 to 135.64 Ω cm, respectively. X-ray diffraction reveals a pure-monoclinic phase, and Raman spatial mapping exhibits higher tensile strain in the films in the presence of SiO x . The β-Ga 2 O 3 layers grown on an AlN template, using the same processes as for sapphire, show an excellent epitaxial relationship between β-Ga 2 O 3 and AlN and have a significant change in β-Ga 2 O 3 surface morphology.

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Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

et al. 2022

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Theoretical and experimental study of (Ga1-xFex)2O3 ternary alloys

Cited by 5 publications

References 65 publications

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Phase Stabilized MOCVD Growth of β‐Ga₂O₃ Using SiO_x on c‐Plane Sapphire and AlN/Sapphire Template

Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

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Theoretical and experimental study of (Ga1-xFex)2O3 ternary alloys

Cited by 5 publications

References 65 publications

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD

Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template

Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

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Phase Stabilized MOCVD Growth of β‐Ga₂O₃ Using SiO_x on c‐Plane Sapphire and AlN/Sapphire Template