Theoretical design of SnTe/GeS lateral heterostructures: A first-principles study

Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

“…[ 33 ] In SnTe, the directions parallel or antiparallel to its in‐plane polarization are defined as <10> (armchair), while the in‐plane direction perpendicular to its polarization is defined as <01> (zigzag). In contrast to previous theoretical studies, which focus on the interfaces along <10> directions [ 43–49 ] the SnTe/PbTe interfaces in our experiments mainly occur along the <11> directions (Figure 1b,c), which are also the preferred directions for the exposed edges in stand‐alone SnTe and PbTe ML nanoplates. [ 33 ] Atom resolved STM topography imaging confirmed atomically sharp interfaces (Figure 1d).…”

“…Because of the similar lattice parameters and compatible crystalline structures of MX MLs, it is straightforward to conceive functional LHSs between these materials and multiple theoretical studies have proposed devices such as diodes and tunneling FETs. [ 43–49 ] Nevertheless, because of the relatively strong interlayer coupling in orthorhombic MX materials, it is difficult to obtain large‐area MX ML flakes through mechanical exfoliation, making controlled growth or etching preparation methods a necessity. [ 50,51 ] Here we applied a two‐step MBE growth procedure to prepare SnTe/PbTe ML LHS nanoplates with PbTe in the core and SnTe at the perimeter, as schematically shown in Figure a.…”

Tailored modifications of the electronic properties of g-C3N4/C2N-h2D nanoribbons by first-principles calculations

“…The left half is g-C 3 N 4 and the right half is C 2 N- h 2D, so we call these nanoribbons g-C 3 N 4 /C 2 N- h 2D. 38 Where the lattice constant a is 35.5 Å and b is 8.26 Å. In Fig.…”

The quantum confinement effects on the electronic properties of monolayer GeS nanoribbon with tube-edged reconstruction

“…Beyond the intrinsic excellent properties, several methods have been proposed to modulate the electronic properties of monolayer GeS. In vertical or lateral heterostructures based on monolayer GeS, type-Ⅱ band alignment can be often obtained, which is conducive to the separation of electron and holes and greatly improves the efficiency of solar cells [30][31][32][33][34][35][36][37][38][39][40][41]. Besides, the band gap of monolayer GeS can be modulated in the range of 0-2 eV by strain [3,[42][43][44][45].…”