Theoretical investigation on enhancement of output performance of CZTSSe based solar cell

Sadanand, Sadanand; Dwivedi, D. K.

doi:10.1016/j.solener.2019.09.079

Cited by 69 publications

(12 citation statements)

References 41 publications

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“…SCAPS is a versatile simulation software for optimising solar cell device configuration (Kumar and Thakur 2018a,b,c,d), simulating light soaking (Kumar and Ranjan 2020), crossover, rollover, skink (Kumar and Thakur 2019;Dinakaran et al 2019) and other experimentally observed phenomena in PV devices using special conditions, defect models and script files. (Minemoto et al 2019;Rau and Schock 1999;Meher et al 2016;Kihwan et al 2017;Houck et al 2019;Sadanand 2019;Burgelman et al 1999) It basically solves electrostatic drift-diffusion equation for a user defined 1D device structure. The mobile ions in perovskite which accumalate at and near intrefaces under volatge poling are utilised to simulate the I-V hysteresis in perovskites PV devices.…”

Section: Physical Modelmentioning

confidence: 99%

Numerical modelling of ion-migration caused hysteresis in perovskite solar cells

Kumar

2021

Opt Quant Electron

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We presented one dimensional defect model to simulate hysteresis in perovskite solar cells. It can be numerically simulated in perovskite devices with p + -i-n + configuration by considering ions migration under influence of different voltage biasing. The availability of mobile ion which contribute towards ion migration, ion accumulation at interfaces and near interface regions are observed to be generating I-V hysteresis in simulations. To simulate ion migration under positive poling we have taken a defect model and reverse the defect polarity for simulating ion migration under negative poling. The hysteresis is observed when the device has either of the condition (a) defects at the interfacial traps at the junction, or (b) defects in p + or n + layer in vicinity of the interface region. Both the conditions have yielded I-V hysteresis when we switched polarity of defect to simulate positive and negative poling. This study brings out the prominent role of mobile ions and carrier dynamics in controlling device working. Band diagram and capacitance variation visibly showed the impacts of charge reversal and capacitance simulations of perovskite device. 1D modelling shows that the ionic migration is one of the responsible mechanisms behind the I-V hysteresis in the perovskite solar cell devices

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Section: Physical Modelmentioning

confidence: 99%

Numerical modelling of ion-migration caused hysteresis in perovskite solar cells

Kumar

2021

Opt Quant Electron

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“…The theoretical analysis is carried out in this work to enhance the performance of solar photovoltaic cells with WO 3 as ETL and WS 2 as ETL [17]. The e ciency of the solar device is studied using the SCAPS-1D numerical simulation program software for solar cell capacitance [17].…”

Section: Device Structure and Materials Parametersmentioning

confidence: 99%

“…However, these conventional sources of non-renewable energy like coal, gas, and oil are limited on earth and the demand for energy consumption is increasing day by day with the development of technology and increasing population [2,3]. Thus, to accomplish the requirements of clean and free energy, renewable energy sources have received a lot of attention [4]. The sun itself is a source of a vast amount of energy that has the ability to accommodate the energy and electricity requirements of the world.…”

Section: Introductionmentioning

confidence: 99%

A simulation study of quantum dot solar cells using two distinct ETL of WO3 and WS2

et al. 2023

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Quantum dot solar cells (QDSCs) have recently attracted a lot of interest since the materials used in them are eco-friendly, good light harvesters, and cheap. Solar Cell Capacitance Simulator-1 dimensional software (SCAPS-1D) is used to carry out this numerical analysis. In the present work, the optimization of two different device architectures is investigated having WO 3 and WS 2 two different electron transport layer(ETL). In the proposed device structure, Sb 2 Se 3 is used as an absorber layer and PbS is used as HTL and CdS is used as a buffer layer. The main objective of this effort is to determine how changing from the WO 3 ETL to the WS 2 ETL affects the photovoltaic parameters. Initially, the solar photovoltaic device is optimized, and then the effect of doping concentrations is investigated. In addition, the effect of series and shunt resistance on the solar device's performance is examined to illustrate the impact of series and shunt resistance on the device's performance. The effect of increasing temperature on the PV parameters is also studied and it is observed that the solar device is temperature-sensitive. Finally, the optimized performance with WS 2 ETL with PCE of 20.60% is achieved.Author contributions: Naureen, Sadanand and Shambhavi Rai analyze the device structure, simulation study and drafted the manuscript. R.K.Yadav, Pooja Lohia and D.K. Dwivedi updated the draft le of manuscript.

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“…The carrier concentration was varied from 10 18 to 10 21 . The variation in the carrier concentration tends to the increment in open-circuit voltage due to an increment in the photon absorption while other parameters decrease [17][18][19][20][21]. The increment in the carrier concentration of the ETL layer reduced the corresponding voltages due to recombination of the minority charge carrier.…”

Section: Impact Of the Absorber And Sno2 Layers Carrier Concentrationmentioning

confidence: 99%

Engineering in SnS-Based Solar Cell for an Efficient Device with Nickel Oxide (NiO) as the Hole Transport Layer

Ray¹,

Sadanand²,

Lohia³

et al. 2021

Adv. Mater. Lett.

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Theoretical investigation on enhancement of output performance of CZTSSe based solar cell

Cited by 69 publications

References 41 publications

Numerical modelling of ion-migration caused hysteresis in perovskite solar cells

Numerical modelling of ion-migration caused hysteresis in perovskite solar cells

A simulation study of quantum dot solar cells using two distinct ETL of WO3 and WS2

Engineering in SnS-Based Solar Cell for an Efficient Device with Nickel Oxide (NiO) as the Hole Transport Layer

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