Theoretical Photovoltaic Conversion Efficiencies of ZnSnP2, CdSnP2, and Zn1-xCdxSnP2Alloys

Yokoyama, Tomoyasu; Oba, Fumiyasu; Seko, Akira; Hayashi, Hiroyuki; Nosé, Yukihiko; Tanaka, Isao

doi:10.7567/apex.6.061201

Cited by 44 publications

(46 citation statements)

References 26 publications

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“…This has frequently not been implemented correctly and has led to confusion and mistakes in the past [37][38][39][40][41][42][43][44][45][46][47][48][49]. The internal and external parameters used in the scope of this work are listed in Table I as well as the equations that connect an internal parameter with its external counterpart.…”

Section: B Extended Detailed Balance Theorymentioning

confidence: 99%

“…One of the first and maybe most prominent examples of such a selection metric proposed for computational materials screening is presented by Yu and Zunger in 2012 [37] and has been widely used to estimate efficiency limits in the last years [38][39][40][41][42][43][44][45][46][47][48][49]. In their paper, they proposed a "spectroscopic limited maximum efficiency" SLME selection metric that aims to calculate efficiency limits for non-step like absorption coefficients beyond the radiative limit.…”

Section: Introductionmentioning

confidence: 99%

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Selection Metric for Photovoltaic Materials Screening Based on Detailed-Balance Analysis

et al. 2017

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The success of recently discovered absorber materials for photovoltaic applications has been generating an increasing interest in systematic materials screening over the last years. However, the key for a successful materials screening is a suitable selection metric that goes beyond the Shockley-Queisser theory that determines the thermodynamic efficiency limit of an absorber material solely by its band gap energy. In this work, we develop a selection metric to quantify the potential photovoltaic efficiency of a material. Our approach is compatible with detailed balance and applicable in computational and experimental materials screening. We use the complex refractive index to calculate radiative and nonrradiative efficiency limits and the respective optimal thickness in the high mobility limit. We compare our model to the widely applied selection metric by Yu and Zunger [Phys Rev Lett 108, 068701 (2012)] with respect to their dependency on thickness, internal luminescence quantum efficiency and refractive index. Finally the model is applied to complex refractive indices calculated via electronic structure theory.2

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Section: B Extended Detailed Balance Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Selection Metric for Photovoltaic Materials Screening Based on Detailed-Balance Analysis

et al. 2017

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“…ZnSnP 2 consists of safe and abundant elements and its bandgap is 1.66 eV [3]. According to the Shockley-Queisser limit [4] under the AM 1.5 spectrum, the theoretical conversion efficiency of ZnSnP 2 single-junction solar cells achieves about 30% [5]. In addition, a high absorption coefficient of around 10 5 cm −1 was reported for visible light [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…According to the Shockley-Queisser limit [4] under the AM 1.5 spectrum, the theoretical conversion efficiency of ZnSnP 2 single-junction solar cells achieves about 30% [5]. In addition, a high absorption coefficient of around 10 5 cm −1 was reported for visible light [5,6]. For electrical properties, it was reported that ZnSnP 2 showed a p-type conduction with the carrier concentration of 10 16 -10 17 cm −3 and mobility of~50 cm 2 V −1 s −1 [3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ZnSnP2 thin films by phosphidation

2015

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a b s t r a c tZnSnP 2 is a promising candidate as a solar absorbing material consisting of earth-abundant and low-toxic elements. In this study, the phosphidation method, where co-sputtered Zn-Sn thin films react with phosphorus gas, was adopted for fabricating ZnSnP 2 thin films. To establish the conditions for producing ZnSnP 2 thin films, we investigated the influence of phosphidation temperature on the product phases, and interpreted the experimental results using chemical potential diagrams of the Zn-Sn-P system. ZnSnP 2 thin films with a single phase were obtained by phosphidation at 500°C under a phosphorus vapor pressure of 10 −2 atm. However, formation of ZnSnP 2 protrusions was observed on the surface of the thin films. Based on the experimental results and the chemical potential diagrams, it is indicated that un-reacted liquid Sn particles reacted with Zn and phosphorus gas to form ZnSnP 2 protrusions in a manner similar to the vapor-Liquid-Solid growth mode.

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“…More recently, the chalcopyrite I 2 -III-VI 2 , perovskite I-II-VII 3 , and kesterite I 2 -II-IV-VI 4 systems have gathered significant interest and increasingly high light-toelectricity conversion efficiency in photovoltaic devices. 1 A common feature of these multi-component semiconductors is that they combine multiple cations (or metals) with a single anion.…”

mentioning

confidence: 99%

Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

Butler

McKechnie

Azarhoosh

et al. 2016

Applied Physics Letters

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The ternary V-VI-VII chalcohalides consist of one cation and two anions. Trivalent antimony—with a distinctive 5s2 electronic configuration—can be combined with a chalcogen (e.g., S or Se) and halide (e.g., Br or I) to produce photoactive ferroelectric semiconductors with similarities to the Pb halide perovskites. We report—from relativistic quasi-particle self-consistent GW theory—that these materials have a multi-valley electronic structure with several electron and hole basins close to the band extrema. We predict ionisation potentials of 5.3–5.8 eV from first-principles for the three materials, and assess electrical contacts that will be suitable for achieving photovoltaic action from these unconventional compounds

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Theoretical Photovoltaic Conversion Efficiencies of ZnSnP₂, CdSnP₂, and Zn_1-xCd_xSnP₂Alloys

Cited by 44 publications

References 26 publications

Selection Metric for Photovoltaic Materials Screening Based on Detailed-Balance Analysis

Selection Metric for Photovoltaic Materials Screening Based on Detailed-Balance Analysis

Fabrication of ZnSnP2 thin films by phosphidation

Quasi-particle electronic band structure and alignment of the V-VI-VII semiconductors SbSI, SbSBr, and SbSeI for solar cells

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