Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials

Fang, Jingtian; Chen, Shanmeng; Vandenberghe, William G.; Fischetti, Massimo V.

doi:10.1109/ted.2017.2695960

Cited by 23 publications

(16 citation statements)

References 56 publications

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“…More recently, novel materials have been considered to improve the performance of electronic devices. For example, atomically thin monolayers, such as graphene, [1] phosphorene, [2] and transition-metal dichalcogenides, [3,4] and their ribbons, [5][6][7][8] are being actively investigated as possible replacements of silicon as the channel material in field-effect transistors. These materials have caused an additional shift from transport models based on bulkmaterial properties towards the comprehensive modeling of the atomic structure of the material.…”

Section: Introductionmentioning

confidence: 99%

“…[9,[14][15][16] Commercial tight-binding transport simulators have already been developed to complement Technology Computer Aided Design (TCAD) in the semiconductor industry [17]. More limited investigations of plane-wave based transport has been undertaken academically, both based on ab-initio pseudopotentials [18,19] and empirical pseudopotentials [6,7]. In addition to the high accuracy of these plane-wave methods, they allow us to probe locally or disturb the interstitial region with impurities and local fields, for example.…”

Section: Introductionmentioning

confidence: 99%

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Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials

Put

Fischetti

Vandenberghe

2019

Computer Physics Communications

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The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such "atomistic" device simulation is most commonly handled using a tight-binding approach based on a basis-set of localized orbitals. Here, in contrast to this widelyused tight-binding approach, we formulate the problem using a highly accurate plane-wave representation of the atomic (pseudo)-potentials. We develop a new approach that separately deals with the intrinsic Hamiltonian, containing the potential due to the atomic configuration, and the extrinsic Hamiltonian, related to the external potential. We realize efficient performance by implementing a finite-element like partitionof-unity approach combining linear shape functions with Bloch-wave enhancement functions. We match the performance of previous tight-binding approaches, while retaining the benefits of a plane wave based model. We present the details of our model and its implementation in a full-fledged self-consistent ballistic quantum transport solver. We demonstrate our implementation by simulating the electronic transport and device characteristics of a graphene nanoribbon transistor containing more than 2000 atoms. We analyze the accuracy, numerical efficiency and scalability of our approach. We are able to speed up calculations by a factor of 100 compared to previous methods based on plane waves and envelope functions. Furthermore, our reduced basis-set results in a significant reduction of the required memory budget, which enables devices with thousands of atoms to be simulated on a personal computer.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials

Put

Fischetti

Vandenberghe

2019

Computer Physics Communications

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“…It has high carrier mobility, so graphene SET can operate with a high speed. A strip of graphene is called graphene nanoribbon (GNR) and it has one dimensional structure [11,12]. Its edge configurations has two different types called armchair and zigzag [13,14,15].…”

Section: -Introductionmentioning

confidence: 99%

Investigating the electrical characteristics of a single electron transistor utilizing graphene nanoribbon as the island

Khademhosseini

Dideban

Ahmadi

et al. 2019

J Mater Sci: Mater Electron

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Single electron transistor (SET) is a fast device with promising features in nanotechnology. Its operation speed depends on the island material, so a carbon based material such as graphene nanoribbon (GNR) can be a suitable candidate for using in SET island. The GNR band gap which depends on its width, has a direct impact on the coulomb blockade (CB) and SET current. In this research, current-voltage characteristic for the SET utilizing GNR in its island is modelled. The comparison study shows the impact of GNR width and length on the SET current. Furthermore SET quantum capacitance is modeled and effect of GNR width and temperature on the quantum capacitance are investigated.

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“…In this paper, we consider GAA transistors based on cylindrical Si nanowires with different crystal orientations and sub-10 nm diameter. When different nanowire orientations are considered, it is found that 100 oriented devices show larger electron mobility [2] and higher ballistic conductance [3]. However, the performance of very short channel devices cannot be predicted only based on these parameters as a comprehensive device description is needed, especially to assess the scaling perspective and the short channel effects.…”

Section: Introductionmentioning

confidence: 99%

A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

Donetti

Sampedro

Ruiz

et al. 2019

Solid-State Electronics

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In this paper, the DC electrical behavior of n-MOS transistors based on Si nanowires with 100 and 110 channel orientations is thoroughly compared by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends on the nanowire diameter and it is slightly, but consistently, larger for 100 than for 110 nanowires. The observed differences in mobility, velocity and spatial charge distribution are interpreted in terms of the effective masses and populations of the different Si conduction band valleys, whose six-fold degeneracy is lifted by quantum confinement in narrow nanowires. Finally, we study the scaling behavior for channel lengths down to 8 nm, concluding that the differences observed between both orientations are minimal.

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Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials

Cited by 23 publications

References 56 publications

Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials

Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials

Investigating the electrical characteristics of a single electron transistor utilizing graphene nanoribbon as the island

A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations

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