Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

Jin, Shaohua; Fischetti, Massimo V.; Tang, Ting-Wei

doi:10.1109/ted.2008.2005172

Cited by 63 publications

(47 citation statements)

References 51 publications

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“…One obvious strength of the H-transformation over the discretization scheme based on the kinetic energy [29] is that the free streaming operator can be treated correctly even in the ballistic limit [51]. Of course, this advantage becomes only possible at the cost of a potential-dependent energy grid.…”

Section: H-transformationmentioning

confidence: 99%

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Hong

Jungemann

2009

J Comput Electron

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The numerical properties of a deterministic Boltzmann equation solver based on a spherical harmonics expansion of the distribution function are analyzed and improved. A fully coupled discretization scheme of the Boltzmann and Poisson equations is proposed, where stable equations are obtained based on the H-transformation. It is explicitly shown that the resultant Jacobian matrix for the zeroth order component has property M for a first order expansion, which improves the stability even of higher order expansions. The detailed dependence of the free-streaming operator and the scattering operator on the electrostatic potential is exactly considered in the Newton-Raphson scheme. Therefore, convergence enhancement is achieved compared with previous Gummel-type approaches. This scheme is readily applicable to small-signal and noise analysis. As numerical examples, simulation results are shown for a silicon n + nn + structure including a magnetic field, an SOI NMOSFET and a SiGe HBT.

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Section: H-transformationmentioning

confidence: 99%

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Hong

Jungemann

2009

J Comput Electron

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“…(12)(13)(14)(15)(16)(17) is good for small R s and low field. However in very large R s and high field limit, the quantum confinement should be determined by two decoupled triangular potential approximation at (1) Si NW with CG and DG with PG :…”

Section: Ecs Transactions 35 (4) 383-401 (2011)mentioning

confidence: 99%

“…Therefore the quantum sub-band lift in NW is larger with very different density of states (DOS) in comparing with the 2D layer. It will affect the charge density in the inversion layer and therefore the quantum capacitance [16] and transport current [9,10,17,18] performances. An excellent paper for quantum confinement effect with anisotropic effective mass is given in [9].…”

Section: Introductionmentioning

confidence: 99%

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Li¹,

Cao²,

Huang³

et al. 2011

ECS Trans.

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In this paper, we discuss the unique property of electrostatics in the gate dielectric of the cylindrical nanowire (NW) MOSFETs, and its impact on the transistor performance and scaling, particularly on the gate tunneling leakage. A dielectric curvature parameter T =T OX /R s with dielectric physical thickness T OX and NW radius R s is introduced. (1) A 2D tunneling model is developed and used to assess the tunneling rate reduction in cylindrical gate (CG) in NW transistor comparing with the planar gate (PG) double gate (DG) transistor. This effect can be very significant when T is large in the practical NW devices. High-k gate dielectric is more effective to suppress the gate leakage in NW than in PG transistors, since High-k dielectric not only increases T OX , but also increases T, both reduce the tunneling rate. (2) On the other hand, comparing NW with radius R s and DG-PG transistor with body thickness T semi = 2R s , the carrier quantization induced tunneling barrier reduction is larger in NW than in DG-PG transistors. For n-MOSFETs, the lowest conduction valley transition effect between *, L, and ' (or X) valleys should also be considered due to carrier quantization in the channels. The gate tunneling rate is finally determined by combining two effects of (1) and (2). Different results due to different conduction band structures are demonstrated for Si, Ge, and InGaAs NWs respectively. (3) The overdrive gate voltage in NW transistor can be reduced significantly, comparing with PG transistor with the same T OX . (4) For the device reliability assessment, at the same time evolution of dielectric charge generation, the NW transistor lifetime can be extended by as much as one order or more, comparing with the PG transistor with the same T OX , when T is large.

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“…As a result of aggressive progress in metal-oxidesemiconductor field-effect transistor ( 1 Meanwhile, the frequencies of input signals have become rather high. Quasistatic response approximations for device simulation are no longer precise enough to describe the details of the device response at such high frequencies.…”

Section: Introductionmentioning

confidence: 99%

“…The most common approach used to solve the BTE deterministically is the relaxation-time approximation (RTA); For example, several multi-subband BTE simulators for planar and nanowire devices based on the RTA are presented in [1][2][3][4]. Considering that scattering is still important in the deca-nanometer range [5,6], it is essential to handle the scattering integral in the BTE numerically instead of using the RTA.…”

Section: Introductionmentioning

confidence: 99%

Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE

Zhao

et al. 2016

J Comput Electron

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In this work, the transient characteristics of nanoscale field-effect transistors (FETs) have been investigated using a deterministic solver based on the timedependent multi-subband Boltzmann transport equation (BTE). The response to a step signal superimposed on the gate or drain electrode is simulated. The transient process can be understood as a combination of electrostatic and transport relaxation. The extracted transient relaxation time for the drain current, which is unrelated to the direct-current (DC) shift, is important for transient device modeling.

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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

Cited by 63 publications

References 51 publications

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE

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