Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

Gopalan, Sanjay; Put, Maarten L. Van de; Gaddemane, Gautam; Fischetti, Massimo V.

doi:10.1103/physrevapplied.18.054062

Cited by 16 publications

(9 citation statements)

References 106 publications

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“…Finally, one element we have not considered is that carrier transport in 2D materials is highly dependent on the dielectric environment and impurity density. , Some dielectric materials may significantly reduce the mobility, and a gate stack consisting of multiple dielectric materials may be required to realize both high mobility and low EOT. We also mention that we did not discuss nonlocal, i.e., wavevector-dependent, dielectric screening, which is important for excitons and other quasiparticles in 2D materials.…”

Section: Electronic Band Offsetmentioning

confidence: 99%

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

Vandenberghe

Osanloo

2023

ACS Appl. Electron. Mater.

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Recent developments in the field of two-dimensional (2D) van der Waals (vdW) dielectrics have captured great interest because of potential applications of 2D materials in future generations of complementary metal-oxide semiconductor (CMOS) technologies. In this Spotlight article, we highlight the progress we recently made toward the discovery of 2D vdW dielectrics, which will be critical to realizing a vdW transistor technology. We provide an overview of how to calculate the dielectric properties of 2D vdW dielectric candidates from first-principles using density functional theory. Furthermore, we show how to quantify the anticipated leakage current through a 2D vdW dielectric. We illustrate the use of hexagonal boron nitride (h-BN), oxyhalides, transition-metal nitride halides (TMNH), and alkaline hydroxides.

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Section: Electronic Band Offsetmentioning

confidence: 99%

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

Vandenberghe

Osanloo

2023

ACS Appl. Electron. Mater.

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“…31,32 Beyond all-inorganic semiconductors, the increase in excitonic binding energies is often observed in monolayers of graphene-related materials and transition-metal dichalcogenides (TMDs). 33,34 The inherent stability of free-standing TMD layers presents great convenience for purposefully modulating the excitonic binding energy by manipulating the surrounding environment. 35,36 To this end, the electronic bandgap and excitonic binding energy in monolayered materials such as WS 2 , WSe 2 , and TiS 2 can be adjusted by several hundred meV.…”

Section: Excitonic Binding Energymentioning

confidence: 99%

“…Although captivating, the exploration of dielectric confinement in classic all-inorganic semiconductors such as GaAs/ZnSe and GaAs/AlGaAs predominantly hinges on the growth of semiconductor heterojunctions. , The intrinsic lattice mismatch of different semiconductors poses a significant challenge in achieving epitaxial growth of such dielectrically confined quantum wells. , Beyond all-inorganic semiconductors, the increase in excitonic binding energies is often observed in monolayers of graphene-related materials and transition-metal dichalcogenides (TMDs). , The inherent stability of free-standing TMD layers presents great convenience for purposefully modulating the excitonic binding energy by manipulating the surrounding environment. , To this end, the electronic bandgap and excitonic binding energy in monolayered materials such as WS 2 , WSe 2 , and TiS 2 can be adjusted by several hundred meV. , These findings validate the efficacy of dielectric confinement in steering exciton dynamics, serving as a foundational basis for the dielectric engineering of 2D OIHPs.…”

Section: Excitonic Binding Energymentioning

confidence: 99%

Dielectric Engineering of 2D Organic–Inorganic Hybrid Perovskites

Chen,

Yu,

Xing

et al. 2023

ACS Energy Lett.

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Manipulating excitons in semiconductors has driven the evolution of today's optoelectronic and photovoltaic devices. Engineering the dielectric constant, a key parameter that is highly associated with the Coulomb force of excitons, has recently emerged as a fresh avenue to regulate excitons from the root. Unlike three-dimensional (3D) bulk semiconductors featuring uniformly distributed dielectric constants, the dielectric constants of two-dimensional (2D) layered semiconductors exhibit spatial variability. Particularly, organic−inorganic hybrid perovskites (OIHPs) assembled with alternating organic and inorganic layers show a cyclic variation in the dielectric property, which substantially impacts exciton dynamics, including recombination and separation, offering an opportunity for the regulation of exciton-related physical attributes by dielectric engineering and the cutting-edge applications thereof. This Review documents the recent advances in the rational design of organic and inorganic constituents of 2D OIHPs for dielectric engineering. We show that dielectrically engineered OIHPs are pivotal in driving the advancements in optoelectrical and photovoltaic applications.

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“…Since the advent of high-κ insulators, the cause of the degradation of the carrier mobility in channels adjacent to the insulators has been the subject of debate (see the ample discussion given in Ref. (24)). Effects such as remote Coulomb scattering or scattering with interface dipoles (25-29) have been blamed for such a degradation.…”

Section: Tmd Monolayers and 'Remote Phonon' Scatteringmentioning

confidence: 99%

(Invited) The Future of Nanoelectronics Devices from a Theoretical Point of View: The Search for New Channel Materials

Fischetti¹,

Gaddemane²,

Gopalan³

et al. 2023

ECS Trans.

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The search for alternatives to Si in the VLSI technology is based on experimental and theoretical work. Here, we consider only the latter and, looking at a few two-dimensional materials of current interest, we use them as examples to emphasize the difficulties faced by theorists in assessing their potential: Silicene and germanene are examples of materials whose properties suffer from the strong scattering of electrons with flexural acoustic phonons; phosphorene highlights how small inaccuracies of ab initio methods prevent a reliable assessment of transport properties; finally, we consider transition metal dichalcogenides to show how surrounding dielectrics (the substrate and/or a top-gate insulator) depress significantly the carrier mobility and the performance of devices that use these materials as channels.

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Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

Cited by 16 publications

References 106 publications

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

Dielectric Engineering of 2D Organic–Inorganic Hybrid Perovskites

(Invited) The Future of Nanoelectronics Devices from a Theoretical Point of View: The Search for New Channel Materials

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