Theoretical Study of the Doping Effects of n-type and p-type Silicon on the Surface Plasmon Resonance Using a 2D Grating

Dhibi, Abdelhak; Khemiri, Mehdi; Oumezzine, M.

doi:10.1007/s12633-018-9814-3

Cited by 5 publications

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“…e = n a a 2 is the dielectric constant of the analyte and e = n S S 2 is the dielectric constant of the doping silicon. The dielectric constant of the doping silicon is obtained from [8].…”

Section: Structure and Phenomenonmentioning

confidence: 99%

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A comparative study of surface plasmon resonance sensors by using doped-silicon grating structure on doped silicon and aluminum film

Dhibi¹

2019

Phys. Scr.

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Surface plasmon resonance (SPR) sensors using a doping silicon grating fabricated over a doping silicon film are proposed. The doping effects of n-type and p-type silicon on the performance of the sensors were calculated and discussed in detail, using a rigorous coupled-wave analysis as a numerical method. The performance parameters of the SPR sensors are defined in terms of full width half maximum (FWHM), sensitivity (S), detection accuracy (DA) and quality factor (χ). The FWHM, DA and χ are enhanced by the increase of charge carriers (N) but the sensitivity is stabled with the change of N. Furthermore, for high charge carriers N = 5 × 1020 cm−3, the effects of grating structural parameters such as grating depth and grating period on the performance is investigated. Moreover, further to increase the performance parameters a doping silicon grating is fabricated over aluminum (Al) film. Numerical results show that the Al film is responsible for enhancing the sensing performance of the proposed SPR based sensors. The present sensors can attain a maximum DA of 1.47 deg−1, S of 219.60 deg RIU−1 and χ of 322.94 RIU−1 for n-type doping silicon grating on Al film and DA of 1.78 deg−1, S of 219.40 deg RIU−1 and χ of 391.42 RIU−1 for p-type doping silicon grating on Al film.

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“…e = n a a 2 is the dielectric constant of the analyte and e = n S S 2 is the dielectric constant of the doping silicon. The dielectric constant of the doping silicon is obtained from [8].…”

Section: Structure and Phenomenonmentioning

confidence: 99%

“…Therefore, special techniques must be used to excite the SP modes. These techniques include attenuated total reflection (prism coupling) and diffraction on periodic gratings (grating coupling) [2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%