Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

Abstract

The performance of crystalline silicon n + /p/p + and n + /n/p + solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 10 17 cm −2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self-consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices.

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

“…This means that analytical modeling cannot clearly link the observed degradation of the solar cell figures of merit to a particular defect. On the other hand numerical simulation has the ability of unequivocally relating the degradation of each figure of merit to a particular defect [27][28][29][30][31][32][33]. In the present work, it can reveal which defect is responsible for the observed phenomenon (the anomalous behavior of the short circuit current) in Si solar cells.…”

Analysis of the power conversion efficiency of perovskite solar cells with different materials as Hole-Transport Layer by numerical simulations

“…All inorganic compounds under consideration in this study are promising candidate for hole transporting material and electron blocking layer [11,12]. The authors have previously used numerical simulations in order to study the behavior of solar cells and PIN photodiodes under different operating conditions [10,[13][14][15].…”

Study of the electrical performance of n-GaAs sub-cells in InGaP/GaAs/Ge 3J solar cells under 1 MeV electron irradiation using computer simulation

“…1, for the entire range of N B and N E considered in this paper, the highest fluence has been calculated in order to prevent the P MPP (Φ)/P MPP (0) ratio from becoming lower than 0.8. This fluence has been named by the authors as Φ 80 in [10]. Fig.…”