In this paper, a theoretical study of different p-p-n perovskite solar cells has been performed by means of computer simulation. Effects of the offset level upon the power conversion efficiency (PCE) of these devices have been researched using five different materials such as spiro-OMeTAD, Cu2O, CuSCN, NiO and CuI, as Hole Transporting Layer (HTL). The Solar Cells Capacitance Simulator (SCAPS)-1D has been the tool used for numerical simulation of these devices. A strong dependence of PCE has been found with the difference between the Maximum of the Valence Band of the HTL and perovskite materials, and with the doping level in p-type perovskite layer. A minimum value of hole mobility in the HTL has been also found, below which the PCE is reduced. Efficiencies in the order of 28% have been obtained for the Cu2O/Perovskite/TiO2 solar cell. Results obtained in this work show the potentiality of this promising technology.

No abstract

The performance of crystalline silicon n + /p/p + and n + /n/p + solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 10 17 cm −2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self-consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices.