Diamond nanostructures (DNSs) were synthesized from three different morphological diamond, including microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films by RIE method and the plasma behavior of microplasma devices using the DNSs and diamond films as cathode materials were investigated. The Paschencurve approach revealed that the -value of diamond materials is similar irrespective of the microstructure (MCD, NCD and UNCD) and geometry (DNSs and diamond films) of the materials. The diamond materials show markedly larger -coefficient than the conventional metallic cathode materials such as Mo and resulted in markedly better plasma illumination behavior for the corresponding microplasma devices. Moreover, the plasma illumination behavior, i.e., the voltage dependence of plasma current density (J pl-V) and plasma density (n e-V) characteristics and the robustness of the devices varied markedly with the microstructure and geometry of the cathode materials that is closely correlated with the EFE properties of the cathode materials. The UNCD nano-pillars, which possess the best EFE properties, resulted in markedly superior plasma behavior, whereas the MCD diamond films, which possess the worst EFE properties, led to inferior plasma behavior than the other kind of diamond cathode materials. Therefore, the detailed study Page 1 of 29 AUTHOR SUBMITTED MANUSCRIPT-MRX-102981 demonstrates that enhancement of plasma characteristics is due to collective effect of EFE behavior and secondary electron emission properties of cathode materials.