Stable Field Electron Emission and Plasma Illumination from Boron and Nitrogen Co‐Doped Edge‐Rich Diamond‐Enhanced Carbon Nanowalls

Abstract

Superior field electron emission (FEE) characteristics are achieved in edge‐rich diamond‐enhanced carbon nanowalls (D‐ECNWs) grown in a single‐step chemical vapor deposition process co‐doped with boron and nitrogen. The structure consists of sharp, highly conductive graphene edges supplied by a solid, diamond‐rich bottom. The Raman and transmission electron microscopy studies reveal a hybrid nature of sp3‐diamond and sp2‐graphene in these nanowalls. The ab‐initio calculations were carried out to support the experimental observations of diamond‐graphene hybrid structure. Finally, this hybrid D‐ECNWs is employed as a cathode in an FEE device resulting in a low turn‐on field of 3.1 V µm−1, a large field enhancement factor, a high FEE Je of 2.6 mA cm−2, and long lifetime stability of 438 min. Such an enhancement in the FEE originates from the unique materials combination, resulting in good electron transport from the graphene phases and efficient FEE of electrons from the sharp edges on the nanowalls. The prospective application of these materials is displayed by employing these hybrids as cathodes in a microplasma device ensuing a low threshold voltage of 160 V and high plasma stability of 140 min, which confirms the role of these hybrid structured nanowalls in the enhancement of electron emission.

Tuning the Laser‐Induced Processing of 3D Porous Graphenic Nanostructures by Boron‐Doped Diamond Particles for Flexible Microsupercapacitors

“…[ 54 ] This aforementioned sp 2 carbon‐dominated BDNW structure originated from the substitutional boron on the diamond lattice. [ 55 ] However, the boron percentage (B/C ≈ 2000 ppm) was too low to be detected in the XPS spectra. The XPS C 1s spectra of all LIG‐based thin film samples were dominated by the CC contribution (284.5 ± 0.1 eV) implying that the LIG films were mainly dominated by sp 2 carbons, which is consistent with the Raman observations.…”

Vertically Aligned Boron-Doped Diamond Hollow Nanoneedle Arrays for Enhanced Field Emission

“…Nevertheless, these materials face issues of dissatisfactory device lifetime, insufficient long-term emission stability, as well as complex cathode assembly. , Although diamond, as a unique material endowed with many excellent physical and chemical properties [e.g., incomparable mechanical properties and thermal conductivity, high breakdown electric field, superb carrier mobility, chemical inertness, and negative electron affinity (NEA) when terminated with hydrogen, etc. ], could show better lifetime stability and reliability, its intrinsic insulating nature would result in a high E TO and a low J max . − Additionally, although hybrid composites such as CNTs/diamond or graphene nanowalls/diamond have been investigated for FEE enhancement, the complicated growth procedures and multimaterial features are still crucial challenges.…”

“…], could show better lifetime stability and reliability, its intrinsic insulating nature would result in a high E TO and a low J max . 7−9 Additionally, although hybrid composites such as CNTs/ diamond 10 or graphene nanowalls/diamond 11 have been investigated for FEE enhancement, the complicated growth procedures and multimaterial features are still crucial challenges.…”

Enhanced Field Emission Properties of ZnO:Al/SrTiO3 Perovskite Composite Films by ZnO:Al Film

“…Therefore, research on field electron emitters for various materials is increasing. [ 12–22 ] Because SrTiO 3 has the advantages of excellent photoelectric performance of perovskite material and stability of inorganic material, it also shows great development potential in the field of field emission (FE). [ 23–25 ]…”

“…Therefore, research on field electron emitters for various materials is increasing. [12][13][14][15][16][17][18][19][20][21][22] Because SrTiO 3 has the advantages of excellent photoelectric performance of perovskite material and stability of inorganic material, it also shows great development potential in the field of field emission (FE). [23][24][25] Metal oxide semiconductor has the advantages of strong practicability, low cost, convenient synthesis, and good chemical stability and is often widely used in semiconductor optoelectronic devices as a dielectric layer material to improve the stability and performance of the devices.…”