Theory and Design Methodology for Reverse-Modulated Dual-Branch Power Amplifiers Applied to a 4G/5G Broadband GaN MMIC PA Design

Zhao, Yulong; Li, Xiang; Gai, Chao; Liu, Chang; Tian, Qi; Hu, Biao; Hu, Xin; Chen, Wenhua; Helaoui, Mohamed; Ghannouchi, Fadhel M.

doi:10.1109/tmtt.2021.3073374

Cited by 17 publications

(2 citation statements)

References 56 publications

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“…The performance of the designed Doherty and Outphasing PAs is summarized in Table 3 and compared to another reported sub-6 GHz GaN DPAs and OPAs. Regarding the DPA, it can be observed that only reference [ 31 ], achieves a higher PAE at a 1-dB compression point. However, it is important to mention that they use drain efficiency as a measure of PAE.…”

Section: Comparative Analysismentioning

confidence: 99%

A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications

et al. 2023

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A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). After a theoretical analysis, the design and layout of both circuits are presented. The DPA uses an asymmetric configuration where the main amplifier is biased in class AB and the auxiliary amplifier is biased in class C, while the OPA uses two amplifiers biased in class B. In the comparative analysis, it has been observed that the OPA presents a better performance in terms of maximum power added efficiency (PAE), while the DPA provides higher linearity and efficiency at 7.5 dB output back-off (OBO). At a 1 dB compression point, the OPA exhibits an output power of 33 dBm with a maximum PAE of 58.3% compared to 44.2% for the DPA for an output power of 35 dBm, and at 7.5 dB OBO, the DPA achieves a PAE of 38.5%, while the OPA achieves 26.1%. The area has been optimized using absorbing adjacent component techniques, resulting in an area of 3.26 mm2 for the DPA and 3.18 mm2 for the OPA.

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Section: Comparative Analysismentioning

confidence: 99%

A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications

et al. 2023

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“…Due to the versatile capability as a device with two control gates, GaAs dual-gate HEMTs have been widely applied in the design of the power amplifiers, mixers, and frequency multipliers. [1][2][3][4] The accuracy of small-signal model plays an important role in the design of integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

A complete small‐signal model of GaAs dual‐gateHEMT

Huang

Chen

2022

Int J Numerical Modelling

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A complete small‐signal model of dual‐gate HEMT is proposed, considering the parasitic element effects. To extract the intrinsic elements accurately, the parasitic elements are eliminated by using a new method in this paper. It is realized by constructing two simple three‐port matrices and eliminating them with the features of π‐type and T‐type networks. This method is fast and accurate. Dual‐gate HEMTs could be regarded as a cascode connection of two single‐gate HMETs. A dual‐gate HEMT is fabricated on a commercial 0.25 μm GaAs technology to verify the proposed the extraction method. The result shows a good agreement between measured and simulated data over a wide frequency range.

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Transparent In/SeO2 Thin Film Transistors Designed for Gigahertz/Terahertz Technologies

Qasrawi

Daragme

2022

J. Electron. Mater.

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Theory and Design Methodology for Reverse-Modulated Dual-Branch Power Amplifiers Applied to a 4G/5G Broadband GaN MMIC PA Design

Cited by 17 publications

References 56 publications

A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications

A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications

A complete small‐signal model of GaAs dual‐gateHEMT

Transparent In/SeO2 Thin Film Transistors Designed for Gigahertz/Terahertz Technologies

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