Theory of noise in medium and far infrared photodetectors

Arutyunyan, V. M.; Gasparyan, F. V.; Melkonyan, S. V.

doi:10.1016/0020-0891(89)90057-2

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…11 . This function subject to the electron-phonon interactions is presented below by expression (7). As is known, the elementary act of the interaction between the conductivity electron and optical phonon can be presented by the following way.…”

Section: Theorymentioning

confidence: 99%

“…The consideration of function F (k, r, ω) in calculations leads to general thermal noise (see Ref. 7).…”

Section: Theorymentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10] In our previous publications 7-10 the electron-phonon interactions are considered to be the main source of the 1/f noise in semiconductors, where only interactions of conduction electrons with acoustic phonons were taken into account. There we obtained theoretical expressions for Hooge's parameter.…”

Section: Introductionmentioning

confidence: 99%

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1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

Gasparyan

Melkonyan

Aroutiounyan

et al. 2000

Int. J. Mod. Phys. B

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The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron-optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

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Section: Theorymentioning

confidence: 99%

“…The consideration of function F (k, r, ω) in calculations leads to general thermal noise (see Ref. 7).…”

Section: Theorymentioning

confidence: 99%

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1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

Gasparyan

Melkonyan

Aroutiounyan

et al. 2000

Int. J. Mod. Phys. B

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“…This transformations were carried out in detail by us (Ref. 15), where, in particular,f(k, r, ω) has the following form (see Eq. (20)) 15 :…”

Section: Theorymentioning

confidence: 99%

Temperature Chaos and the Lattice Character of the Hooge Parameter in Semiconductors

et al. 1998

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The influence of the electron-phonon interaction on formation of the low-frequency noise in semiconductors is theoretically considered. The determining role of scattering mechanisms in formation of the 1/f low frequency noise is shown. The temperature dependence of the Hooge parameter α H is revealed and explained. The lattice character of α H is proven.1245 Mod. Phys. Lett. B 1998.12:1245-1254. Downloaded from www.worldscientific.com by YALE UNIVERSITY on 07/04/15. For personal use only.

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Antimony-Based Infrared Materials and Devices

Grigorescu

Stradling

2000

Handbook of Thin Film Devices

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Theory of noise in medium and far infrared photodetectors

Cited by 6 publications

References 6 publications

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

Temperature Chaos and the Lattice Character of the Hooge Parameter in Semiconductors

Antimony-Based Infrared Materials and Devices

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